Viorel Banu
Spanish National Research Council
57 Papers
335 Citations
Viorel Banu is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Schottky diode & Diode. The author has an hindex of 12, co-authored 57 publications. Previous affiliations of Viorel Banu include Autonomous University of Barcelona.
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Papers
SiC Schottky Diodes for Harsh Environment Space Applications
Philippe Godignon,X. Jorda,Miquel Vellvehi,Xavier Perpiñà,Viorel Banu,D. Lopez,J. Barbero,Pierre Brosselard,S. Massetti +8 more
TL;DR: The manufactured diodes demonstrated high stability for a continuous operation at 285 °C and the use of gold metallization and gold wire bonds on the anode allows reducing the diode surface and bonding degradation when compared to Al-containing technology.
105
Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications
Luis A. Navarro,Xavier Perpiñà,Philippe Godignon,Josep Montserrat,Viorel Banu,Miquel Vellvehi,X. Jorda +6 more
TL;DR: In this paper, a comparative analysis of the thermomechanical performance of high-temperature die-attach materials (sintered nano-Ag, AuGe, and PbSnAg) under harsh thermal cycling tests is presented.
98
Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes
Pierre Brosselard,Nicolas Camara,Viorel Banu,X. Jorda,Miquel Vellvehi,Philippe Godignon,José Millan +6 more
TL;DR: In this paper, the authors used 1.2 and 3.4H-SiC junction barrier Schottky (JBS) diodes with two different layouts for DC electrical stresses.
A HfO 2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology
A. Fontserè,Amador Pérez-Tomás,Viorel Banu,Phillippe Godignon,José Millan,H. De Vleeschouwer,J. Parsey,Peter Moens +7 more
- 03 Jun 2012
TL;DR: In this paper, a high performance AlGaN/GaN MIS gated HEMT (MIS-HEMT) and passivated high electron mobility transistors (HEMTs) fabricated with a 4-inch Si CMOS compatible technology are presented.
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Enhanced power cycling capability of SiC Schottky diodes using press pack contacts
TL;DR: This work presents experimental comparative results of power cycling capability of SiC Schottky diodes performed on various encapsulation technologies and shows the most suitable packaging technology for SiC devices sustaining high temperature swing.
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