Vinod Adivarahan
University of South Carolina
150 Papers
2.8K Citations
Vinod Adivarahan is an academic researcher from University of South Carolina. The author has contributed to research in topics: Light-emitting diode & Sapphire. The author has an hindex of 45, co-authored 150 publications.
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Papers
Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes
Jianping Zhang,Vinod Adivarahan,H. M. Wang,Qhalid Fareed,Edmundas Kuokstis,A. Chitnis,Maxim S. Shatalov,J. W. Yang,Grigory Simin,Muhammad Asif Khan,Michael Shur,Remis Gaska +11 more
TL;DR: In this article, a pulsed atomic layer epitaxy (PALE) growth technique for quaternary AlInGaN films for ultraviolet optoelectronics applications was reported. But the PALE approach was not applied to the growth of AL-GaN multiple quantum wells (MQWs) over sapphire substrates.
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Band-edge luminescence in quaternary AlInGaN light-emitting diodes
Maxim S. Shatalov,A. Chitnis,Vinod Adivarahan,A. Lunev,Jimei Zhang,J. W. Yang,Qhalid Fareed,Grigory Simin,A. Zakheim,M. Asif Khan,Remigijus Gaska,Michael Shur +11 more
TL;DR: In this paper, the operation of InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported.
GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
Wenhong Sun,Jinwei Yang,Changqing Chen,J. P. Zhang,M. E. Gaevski,E. Kuokstis,Vinod Adivarahan,Heyun Wang,Zheng Gong,Ming Su,M. Asif Khan +10 more
TL;DR: In this article, the growth of GaN/Al 0.20Ga0.8N multiple quantum wells (MQWs) on selective-area-grown a-plane GaN pillars over r-plane sapphire was investigated.
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Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN
Vinod Adivarahan,Qhalid Fareed,Monirul Islam,Thomas M. Katona,Balakrishnan Krishnan,Asif Khan +5 more
TL;DR: In this paper, the authors reported 290 nm emission deep ultra-violet light emitting diodes with AlGaN multiple quantum well active regions exhibiting stable cw-powers in excess of 2 mW.
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324 nm Light Emitting Diodes with Milliwatt Powers
A. Chitnis,Jianping Zhang,Vinod Adivarahan,Wu Shuai,Jie Sun,Maxim S. Shatalov,J. W. Yang,Grigory Simin,Muhammad Asif Khan +8 more
TL;DR: In this article, light emitting diodes with peak emission at 324 nm were fabricated over low-defect density n+-Al0.2Ga0.8N buffer layers.
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