Vincent Delaye
Council for the Curriculum, Examinations & Assessment
7 Papers
35 Citations
Vincent Delaye is an academic researcher from Council for the Curriculum, Examinations & Assessment. The author has contributed to research in topics: Wafer & Direct bonding. The author has an hindex of 4, co-authored 7 publications.
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Papers
Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization
Alexandre Hubert,Jean-Philippe Colonna,Stéphane Bécu,Cecilia Dupre,V. Maffini-Alvaro,Jean-Michel Hartmann,Sébastien Pauliac,C. Vizioz,F. Aussenac,Catherine Carabasse,Vincent Delaye,Thomas Ernst,Simon Deleonibus +12 more
- 24 Oct 2008
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Strain-enhanced performance of Si-Nanowire FETs
M. Casse,Sylvain Barraud,R. Coquand,Masahiro Koyama,David Cooper,C. Vizioz,C. Comboroure,P. Perreau,V. Maffini-Alvaro,Claude Tabone,L. Tosti,Sébastien Barnola,Vincent Delaye,F. Aussenac,Gerard Ghibaudo,Hironori Iwai,G. Reimbold +16 more
- 03 May 2013
TL;DR: Casse et al. as mentioned in this paper proposed an approach to solve the problem of high power consumption in the context of STMicroelectronics, IMEP-LAHC, INPG-MINATEC and Frontier Research Center, Tokyo Institute of Technology.
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Wafer Level 3D Stacking Using Smart Cut and Metal-Metal Direct Bonding Technology
Lea Di Cioccio,Ionut Radu,Floriane Baudin,Angelique Mounier,Thomas Lacave,Vincent Delaye,Bruno Imbert,Nicolas Chevalier,Mariolle Denis,Gweltaz Gaudin,Frederic Mazen,Stephane Thieffry,Thomas Signamarcheix +12 more
- 15 Mar 2013
TL;DR: In this paper, the Smart CutTM technology using low temperature metal direct bonding (allowing direct vertical integration) is demonstrated, which is one of the emerging technologies in this field.
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Direct bonding of titanium layers on silicon
Floriane Baudin,L. Di Cioccio,Vincent Delaye,Nicolas Chevalier,Jerome Dechamp,Hubert Moriceau,E. Martinez,Yves Bréchet +7 more
TL;DR: In this paper, the authors show room temperature direct bonding of titanium layers on silicon wafers at atmospheric pressure and ambient air using transmission electron microscopy and spreading scanning resistance microscopy.
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Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure
B. Imbert,X. Blot,Aurélie Tauzin,T. Salvetat,E. Lagoutte,C. Lecouvey,T. Chaira,V. Larrey,C. Bridoux,F. Fournel,Vincent Delaye,A. M. Papon,Hubert Moriceau,V. Carron +13 more
TL;DR: In this paper, the authors showed that gallium oxide is formed at the bonded interface due to the presence of water that is trapped at the InP/GaAs interface during the hydrophilic bonding.
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