The correlation between atomic bonding sites and the electronic structure of SiO on GaAs(001)-c(2×8)∕(2×4) was investigated using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional theory (DFT). At low coverage, STM images reveal that SiO molecules bond Si end down; this is consistent with Si being undercoordinated and O being fully coordinated in molecular SiO. At ∼5% ML (monolayer) coverage, multiple bonding geometries were observed. To confirm the site assignments from STM images, DFT calculations were used to estimate the total adsorption energies of the different bonding geometries as a function of SiO coverage. STS measurements indicated that SiO pins the Fermi level midgap at ∼5% ML coverage. DFT calculations reveal that the direct causes of Fermi level pinning at the SiO GaAs(001)-(2×4) interface are a result of either local charge buildups or the generation of partially filled dangling bonds on Si atoms.

/pdf/direct-and-indirect-causes-of-fermi-level-pinning-at-the-sio-4y3626z2ty.pdf

Direct and indirect causes of Fermi level pinning at the SiO∕GaAs interface

Study of n‐GaAs MOS Diodes with Spin‐on SiO2 Layer

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Study of n‐GaAs MOS Diodes with Spin‐on SiO2 Layer