Van Tu Vu
Sungkyunkwan University
10 Papers
1 Citations
Van Tu Vu is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Doping & Photodiode. The author has an hindex of 2, co-authored 4 publications.
Chat about Author
Papers
One-Step Synthesis of NbSe2/Nb-Doped-WSe2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact.
Van Tu Vu,Thi Thanh Huong Vu,Thanh Luan Phan,Won Tae Kang,Young Rae Kim,Minh Dao Tran,Huong Thi Thanh Nguyen,Young Hee Lee,Woo Jong Yu +8 more
TL;DR: In this paper, a one-step growth approach was proposed to synthesize Nb-doped WSe2 with controllable doping concentration and metal/doped-semiconductor vdWHs.
62
Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode.
Van Tu Vu,Thanh Luan Phan,Thi Thanh Huong Vu,Miju Park,Van Dam Do,V. Q. Bui,Kunnyun Kim,Young Hee Lee,Woo Jong Yu +8 more
TL;DR: In this article , selective Nb doping at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed.
26
Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure
Ji Eun Kim,Won Tae Kang,Van Tu Vu,Young Rae Kim,Yong Seon Shin,Ilmin Lee,Ui Yeon Won,Boo Heung Lee,Kunnyun Kim,Thanh Luan Phan,Young Hee Lee,Woo Jong Yu +11 more
TL;DR: In this paper, a doping-controlled WSe2-MoSe2 PN heterojunction was proposed to improve the optical properties of the current 2D heterostructures, which can be greatly improved by forming an ideal PN diode via the doping control of 2D materials.
20
Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays
Thanh Luan Phan,Dinh Loc Duong,Tuan Khanh Chau,Sidi Fan,Won Tae Kang,Thi Suong Le,Hyun Yong Song,Linfeng Sun,Van Tu Vu,Min Ji Lee,Quoc An Vu,Young Hee Lee,Woo Jong Yu +12 more
TL;DR: In this article, a self-assembly of molecules (SAM) buffer layer is proposed for tuning the inhomogeneous charge transport in ZnO film, which not only reduces the interface trap density, but also enhances the gate electric field modulation at the hetero-interface.
1
Current Rectification in a Sub-2 nm CNT/V-Doped WS2/MoS2/CNT Vertical Monolayer P-N Diode.
Van Dam Do,Van Tu Vu,Van Cao Nguyen,Vu Khac Dat,Whan Kyun Kim,Thi Uyen Tran,Minh Chien Nguyen,Ngoc Thanh Duong,Anthony Cabanillas,Huamin Li,Woo Jong Yu +10 more
TL;DR: Researchers develop a sub-2 nm vertical P-N diode with a CNT/WS2/MoS2/CNT structure, achieving current rectification and negative photoconductivity due to van der Waals gaps and Schottky barriers, with fast photoresponse and improved performance over previous designs.