V. Ta Phuoc
Centre national de la recherche scientifique
21 Papers
82 Citations
V. Ta Phuoc is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Optical conductivity & Electronic band structure. The author has an hindex of 8, co-authored 21 publications.
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Papers
Local symmetry breaking and spin–phonon coupling in SmCrO3 orthochromite
TL;DR: In this article, Raman scattering and infrared reflectivity performed on polycrystalline SmCrO 3 support strong influence of the antiferromagnetic order on phonon modes.
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New high-pressure/low-temperature set-up available at the AILES beamline
Alexandre Voute,M. Deutsch,Aleksandr Kalinko,Frederico G. Alabarse,Jean Blaise Brubach,Francesco Capitani,M. Chapuis,V. Ta Phuoc,Rodolphe Sopracase,Pascale Roy +9 more
TL;DR: In this article, a diamond anvil cell (DAC) was used to measure the transmittance and the reflectivity of a given sample, with the ability to vary and monitor in situ both its pressure (from 0 to 14 GPa) and temperature (from 35 to 320 K).
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Ultrafast filling of an electronic pseudogap in an incommensurate crystal
Véronique Brouet,J. Mauchain,E. Papalazarou,Jérôme Faure,Marino Marsi,Ping-Hui Lin,A. Taleb-Ibrahimi,P. Le Fèvre,François Bertran,Laurent Cario,Etienne Janod,Benoit Corraze,V. Ta Phuoc,Luca Perfetti +13 more
TL;DR: In this paper, angle and time resolved photoemission spectroscopy was used to investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and temperature resolved spectroscopic analysis.
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Orbital anisotropy and low-energy excitations of the quasi-one-dimensional conductor β -Sr 0.17 V 2 O 5
Jude Laverock,A. R. H. Preston,Bo Chen,James McNulty,Kevin E. Smith,Louis F. J. Piper,Per-Anders Glans,J.-H. Guo,C. Marin,Etienne Janod,V. Ta Phuoc +10 more
TL;DR: In this article, the electronic structure of vanadium beta-bronze has been measured in detail using soft x-ray absorption spectroscopy and resonant inelastic soft xray scattering, and these measurements have been used to derive the experimental site-resolved ($k$-integrated) band structure of a material whose electronic structure is difficult to obtain from first principles.
Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8
Benoit Corraze,Etienne Janod,Laurent Cario,Philippe Moreau,Luc Lajaunie,P. Stoliar,P. Stoliar,P. Stoliar,Vincent Guiot,Vincent Dubost,Julien Tranchant,Stéphanie Salmon,Marie-Paule Besland,V. Ta Phuoc,Tristan Cren,Dimitri Roditchev,N. Stephant,D. Troadec,Marcelo J. Rozenberg +18 more
TL;DR: In this article, the Mott insulator compounds AM4Q8 exhibit a new type of volatile and non-volatile resistive switchings that are of interest for RRAM application.
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