V. Such
University of Valencia
19 Papers
111 Citations
V. Such is an academic researcher from University of Valencia. The author has contributed to research in topics: Microstrip & Finite-difference time-domain method. The author has an hindex of 9, co-authored 19 publications.
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Papers
Analysis of the finite difference time domain technique to solve the Schrödinger equation for quantum devices
TL;DR: In this paper, an extension of the finite difference time domain is applied to solve the Schrodinger equation, and a systematic analysis of stability and convergence of this technique is carried out.
FDTD analysis of E-sectoral horn antennas for broad-band applications
TL;DR: In this article, the performance of E-plane sectoral horn antennas for broad-band applications was investigated using the finite difference time domain (FDTD) method, and perfect matched layers (PMLs) combined with first-order absorbing boundaries were employed to simulate the free-space environment in the FDTD mesh.
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Calculation of the characteristic impedance of microstrips using a full‐wave 2‐D FDTD scheme
TL;DR: In this paper, a two-dimensional FDTD scheme is used to calculate both the propagation constant and the characteristic impedance of the fundamental quasi-TEM mode in a microstrip which, in fact, is a hybrid mode.
15
Modeling of thin curved sheets with the curvilinear FDTD
TL;DR: In this paper, the FDTD-GCC was modified to account for the analysis of thin curved dielectric sheets, where the contravariant electric field normal to the sheet is split in two subcomponents, and new nodes are introduced where the thin sheet is located.
11
Analysis of H-plane waveguide discontinuities with an improved finite-difference time domain algorithm
Enrique A. Navarro,V. Such,Benito Gimeno,Jose L. Cruz +3 more
- 01 Apr 1992
TL;DR: In this paper, a finite-difference time domain scheme for the analysis of H-plane waveguide discontinuities is described, which is tested by comparing the numerical results for a right corner bend and a T junction, the choice of the absorbing boundary conditions is discussed for each case.
10