The mathematical decomposition of the IR absorption spectrum obtained from a Si layer after the C+ ion implantation with an energy of 10 or 40 keV or from a homogeneous SiC0.7 film has demonstrated that fractions of weak elongated Si-C bonds in the amorphous phase, strong shortened Si-C bonds on the surface of small nanocrystals, and tetrahedral Si-C bonds in the crystalline phase (degree of crystallinity) after high-temperature annealing (1250–1400°C) of the layers are equal to 29/29/42, 22/7/71, and 21/31/48%, respectively. A system of SiC2.0, SiO2, SiC0.8, and SiC0.6 layers in the film on the Si substrate has been identified using X-ray reflectometry and the simulation with the Release software. The reflectometry data on fluctuations of the intensity of X-ray reflections in the region of the main maximum have been interpreted in terms of variations in the density over the depth of the layer with a Gaussian distribution of carbon atoms from 2.55 and 2.90 g/cm3 for the SiC0.25 and SiC0.65 layers, respectively, to 3.29 g/cm3 for the SiC1.36 layer.

Structure and composition of silicon carbide films synthesized by ion implantation

Effect of anodization time on photoluminescence of porous thin SiC layer grown onto silicon

The benefits of pulsed plasma processing, including pulsing both cathode and substrate in physical vapour deposition (PVD) processes (magnetron sputtering and cathodic arc evaporation (CAE)) and the pulsed plasma enhanced chemical vapour deposition (P-PECVD) process were demonstrated by correlating the pulsed plasma process parameters, microstructure and properties. Five coating systems were developed for structural, electronic, functional and tribological applications. These are: pulsed reactive magnetron sputtering of TiO thin films; alumina deposition with pulsed plasma in closed field unbalanced magnetron sputtering; deposition of thin film silicon using P-PECVD; high energy pulsed bias assisted CAE of Cr–N graded coatings on 7075-T6 Al substrates; and sputter deposition of nickel anode on protonic BaCe0.9Y0.1O3–a electrolyte under pulsed dc biasing of substrate. Pulsed plasma was found to change particle energies and plasma composition in both PVD and CVD processes. Through controlled ion bom...

Effect of Pulsed Plasma Processing on Controlling Nanostructure And Properties of Thin Film/Coatings

Surface characterization and biocompatibility of isotropic microstructure prepared by UV laser

Initial study on the structure and photoluminescence properties of SiC films doped with Al

We report the formation of the continuous β-SiC layers on Si by means of C + implantation into Si followed by pulsed ion-beam treatment (C + , 300 keV, 50 ns). Transmission electron microscopy and electron diffraction indicate the formation of a polycrystalline β-SiC layers with a grain size of up to 100 nm. Porous SiC/Si structures were prepared by anodization and were studied by photoluminescence (PL) at room temperature. Three PL bands were observed at 460, 520 and 615 nm and were ascribed to the SiC nanocrystals, C-rich clusters and Si nanocrystals, respectively. The time constant τ =40 ns was deduced from time-resolved PL measurements. It is close to the value for direct band gap semiconductors and is shorter nearly by 3 orders of magnitude than that for porous Si.

Structure and photoluminescent properties of SiC layers on Si, synthesized by pulsed ion-beam treatment

Effect of irradiation by high-energy electron and ion beams on the variation of critical parameters of second-generation YBCO(123) tapes

The effect of long-term direct current transport through a rectilinear sample of a second-generation composite tape on the basis of a high-temperature superconductor YBCO(123)YBa2Cu3O7 − x, was studied at T = 77 K (I = 0.7Ic for 300 h and I = 1.3Ic for 100 h). If in the first case the critical current value did not change, in the second case, when the current passed through a sample in the mixed state, the critical current decreased both at zero field and in magnetic fields of up to 10 T. Scanning Hall magnetometry applied for studying the tape current-carrying ability and structural defects in samples allowed us to detect a microscopic defect arising in a sample after current overload. Experimental results were interpreted in the framework of an idea about the mixed character of the electric conductivity of YBCO(123) in the normal phase.

Modification of superconducting YBCO(123) tape at current transport at T = 77 K

When a target is ablated in an atmosphere of an inert buffer gas by low-intensity
 laser radiation (no greater than 105W/cm2), nanoparticles
 self-assemble into low-dimensional fractal structures. The dependences of the efficiency
 of the self-assembly process on the composition of the silicon-silica target and the
 pressure of the buffer gas manifest a distinct correlation with percolation in the
 plasma of the laser flare. A structure with a fractal dimension of
 df>2 is formed most efficiently close to the three-dimensional
 percolation threshold pc≈0.3, where pc is the ratio of the number
 density of silicon atoms to the number of all the atoms in the laser flare. Close to the
 two-dimensional percolation threshold (pc≈0.5), fractal structures are
 observed with df<2, assembled on a plane. The main structural elements
 of the observed objects are one-dimensional structures--chains of tens of nanoparticles,
 with a characteristic size of about 80nm. Results of a study of fractal nanostructures
 by scanning electron microscope are presented, an x-ray structural analysis is carried
 out, and the photoluminescence is studied.

Formation of silicon nanostructures when a target is ablated by a quasi-continuous laser pulse

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Papers

Structure and photoluminescent properties of SiC layers on Si, synthesized by pulsed ion-beam treatment

Effect of irradiation by high-energy electron and ion beams on the variation of critical parameters of second-generation YBCO(123) tapes

Modification of superconducting YBCO(123) tape at current transport at T = 77 K

Formation of silicon nanostructures when a target is ablated by a quasi-continuous laser pulse