A pilot technological facility implementing a new type of plasmochemical reactor on the basis of a beam-plasma discharge was developed. Specific features of the reactor design are described. The design of the electron injector as the most important unit of the reactor is described. The developed facility was tested and its main characteristics were measured. The technological features of treatment (etching, deposition) of nonconducting structures are presented.

A plasmochemical reactor based on a beam-plasma discharge

The process and applications of a specific type of gaseous discharge—beam–plasma discharge (BPD)—are reviewed. A brief survey of the BPD theory is presented. The basic features of BPD in active geophysical experiments with injection of electron beams into Earth’s ionosphere are discussed. Studies of the physics of BPD have revealed the effects successively applied in plasma technology for processing nanoelectronic materials and structures.

/pdf/beam-plasma-discharge-in-space-and-in-a-lab-2oyipb4eoo.pdf

Beam–Plasma Discharge in Space and in a Lab

We have explored the beam-plasma discharge excited by the injection of a continuous electron beam with energy 1–10 keV and current 10–60 mA into a cylindrical dielectric cavity at a pressure of 1–10 Pa. The plasma density and the electron temperature of the discharge are 1.2–3 times greater than for the plasma formed by electron beam transport in the vacuum chamber without a cavity. We describe a model in which there is an additional inflow of energy into the discharge from secondary electrons emitted from the cavity surface by beam electrons and from plasma ions accelerated in the near-wall sheath. We show that this discharge can be used for efficient ion etching of the inner surface of dielectric vessels.

Beam-plasma discharge in a dielectric cavity by electron beam injection

https://iopscience.iop.org/article/10.1088/1742-6596/1393/1/012058/pdf

Beam plasma discharge in technologies of materials for nanoelectronics

The review considers plasma-processing technologies used in solid-state electronics, both widely used and ones, which do not found yet industrial applications. Several from them are developed specifically for creating nanoelectronic devices. Tendencies toward an increase in the working rate and memory volume and a decrease in the sizes of telecommunication systems necessitate the development of electronic devices based on new principles and, hence, the corresponding technologies for implementation. Physical problems that impede the application of conventional methods in new problems are analyzed, and possible solutions are proposed.

Plasma technologies for material processing in nanoelectronics: Problems and solutions

A modification of the plasma-chemical reactor based on beam-plasma discharge is developed for the deposition of carbon (including diamond-like carbon (DLC)) films. The reactor differs from the existing devices by the simplicity of the procedure that makes it possible to control the energy characteristics of the ion beam incident on the film in the course of deposition. A method for the computer simulation of the parameters of the ion flux on an electrically insulated surface upon the modulation of the plasma potential is proposed. The method allows the prediction of the ion energy and ion flux that acts upon the deposited film. DLC films on metal substrates are produced. The charge deep-level transient spectroscopy is used to reveal the effect of the adsorbed water and alcohol vapors on the electrophysical properties of the films, which indicates that the films can be used as active adsorbing materials in chemical sensors.

Synthesis of carbon films in a plasma-chemical reactor based on beam-plasma discharge

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Synthesis of carbon films in a plasma-chemical reactor based on beam-plasma discharge