Thermoelectric materials are capable of converting heat and electricity to each other Thermoelectric devices can be miniaturized and highly integrated with existing semiconductor chip systems with microgenerators or microrefrigerators After years of research and accumulation, BiTe series, SnSe series, CuSe series, half-Heusler series, multicomponent oxides series, organic–inorganic composites series, and GeTe/PbTe series have been found to have excellent thermoelectric properties According to theoretical calculation, when the diameter of Bi2Te3 nanowires is 5 A, the ZT value reaches 14, and graphdiyne has a ZT value of 48 at 300 K Experimental measurements revealed that the ZT value of n-type SnSe reached 28 This review would focus on the updated experimental and theoretical achievements of seven kinds of materials, including BiTe series, SnSe series, CuSe series, multicomponent oxides, half-Heusler alloys, organic–inorganic composites, and GeTe/PbTe series The preparation method, microstructure characteristics, device structure, and thermoelectric properties of each material will be described in detail By analyzing the performance of these materials, three possible development directions are put forward for how to further improve the thermoelectric properties of materials

Review of current high-ZT thermoelectric materials

Bismuth telluride is known to wield unique properties for a wide range of device applications. However, as devices migrate to the nanometer scale, significant amount of studies are being conducted to keep up with the rapidly growing nanotechnological field. Bi2Te3 possesses distinctive properties at the nanometer level from its bulk material. Therefore, varying synthesis and characterization techniques are being employed for the realization of various Bi2Te3 nanostructures in the past years. A considerable number of these works have aimed at improving the thermoelectric (TE) figure-of-merit (ZT) of the Bi2Te3 nanostructures and drawing from their topological insulating properties. This paper reviews the various Bi2Te3 and Bi2Te3-based nanostructures realized via theoretical and experimental procedures. The study probes the preparation techniques, TE properties and the topological insulating effects of 0D, 1D, 2D and Bi2Te3 nanocomposites. With several applications as a topological insulator (TI), the topological insulating effect of the Bi2Te3 is reviewed in detail with the time reversal symmetry (TRS) and surface state spins which characterize TIs. Schematics and preparation methods for the various nanostructural dimensions are accordingly categorized.

Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

Growth and structure of thermally evaporated Bi2Te3 thin films

Thickness oscillations of the transport properties in n-type Bi2Te3 topological insulator thin films

Bi2Te3 compound and Bi2Te3-based solid solutions have attracted much attention as promising thermoelectric materials for refrigerating devices. The possibility of enhancing the thermoelectric efficiency in low-dimensional structures has stimulated studies of Bi2Te3 thin films. Now, interest in studying the transport properties of Bi2Te3 has grown sharply due to the observation of special properties characteristic of three-dimensional (3D) topological insulators in Bi2Te3. One of the possible manifestations of quantum size effects in two-dimensional structures is an oscillatory behavior of the dependences of transport properties on film thickness, d. The goal of this work is to summarize our earlier experimental results on the d-dependences of transport properties of Bi2Te3 thin films obtained by thermal evaporation in a vacuum on glass substrates, and to present our new results of theoretical calculations of the oscillations periods within the framework of the model of an infinitely deep potential well, which takes into account the dependence of the Fermi energy on d and the contribution of all energy subbands below the Fermi level to the conductivity. On the basis of the data obtained, some general regularities and specificity of the quantum size effects manifestation in 3D topological insulators are established.

Quantum Size Effects in Transport Properties of Bi 2 Te 3 Topological Insulator Thin Films

V2VI3 compounds and solid solutions based on them are known to be the best low-temperature thermoelectric (TE) materials. The predicted possibility of enhancement of the TE figure of merit in two-dimensional (2D) structures has stimulated studies of the properties of these materials in the thin-film state. The goal of the present work is to study the dependences of the Seebeck coefficient S, electrical conductivity σ, Hall coefficient RH, charge carrier mobility μH, and TE power factor P = S2σ of Bi2Te3 thin films on the composition of the initial bulk material used for preparing them. Thin films with thickness d = 200 nm to 250 nm were grown by thermal evaporation in vacuum of stoichiometric Bi2Te3 crystals (60.0 at.% Te) and of crystals with 62.8 at.% Te onto glass substrates at temperatures TS of 320 K to 500 K. It was established that the conductivity type of the initial material is reproduced in films fairly well. For both materials, an increase in TS leads to an increase in the thin-film structural perfection, better correspondence between the film composition and that of the initial material, and increase in S, RH, μH, σ, and P. The room-temperature maximum values of P for the films grown from crystals with 60.0 at.% and 62.8 at.% Te are P = 7.5 × 10−4 W/K2 m and 35 × 10−4 W/K2 m, respectively. Thus, by using Bi2Te3 crystals with different stoichiometry as initial materials, one can control the conductivity type and TE parameters of the films, applying a simple and low-cost method of thermal evaporation from a single source.

Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi 2 Te 3 Thin Films

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Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi 2 Te 3 Thin Films