The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

A search for deeply bound pionic states of xenon produced in the 136Xe(d, 3He)135Xeπ-bound reaction at Ed = 500 MeV is reported. The population of the 1s pionic-atom state of 135Xe is observed on the predicted level of the cross section ∼ 40 μb/sr. The binding energy of the 1s state, B = 2.9 ± 0.5 MeV, however, is lower than theoretically predicted.

A search for deeply bound pionic states of xenon produced in the 136Xe(d, 3He)135Xeπ-bound reaction

The 28Si(p, p' gamma)24Mg reaction has been studied at the ITEP accelerator by the hadron-gamma coincidence method for a proton energy of 1 GeV. Two reaction products are detected: a 1368.6-keV gamma-ray photon accompanying the transition of the 24Mg* nucleus from the first excited state to the ground state and a proton p' whose momentum is measured in a magnetic spectrometer. The measured distribution in the energy lost by the proton in interaction is attributed to five processes: the direct knockout of a nuclear alpha cluster, the knockout of four nucleons with a total charge number of 2, the formation of the DeltaSi isobaric nucleus, the formation of the Delta isobar in the interaction of the incident proton with a nuclear nucleon, and the production of a pi meson, which is at rest in the nuclear reference frame. The last process likely corresponds to the reaction of the formation of a deeply bound pion state in the 28P nucleus. Such states were previously observed only on heavy nuclei. The cross sections for the listed processes have been estimated.

Formation of 24Mg* in the Splitting of 28Si Nuclei by 1-GeV Protons

The parameters of a spectrometer for searching for deeply bound pionic states of xenon are presented. The main component of the spectrometer is a multilayer semiconductor telescope based on high-purity germanium detectors. A technique for calibrating the spectrometer and measuring its energy resolution using reactions p(d, 3He)π0 and 14N(d, 3He)13C is described. The energy resolution of the setup is shown to be 0.85 MeV for 3He ions with an energy of ∼360 MeV.

A spectrometer for seeking exotic states of pionic atoms of xenon

An experiment on studying the 28Si(p, p′ γ 0 X)24Mg semicoherent reaction is carried out at the MAG setup on the 1-GeV proton beam of the U-10 ITEP accelerator. Two particles, proton and γ-ray photon, which accompanies the transition of the 24Mg* nucleus from the first excited state to the ground state, are detected. When the events with the proton emission angle from 3° to 6.5° are selected, the following four processes are observed: the direct knockout of a nuclear α cluster by a proton, the formation of a ΔSi isobaric nucleus, the formation of a Δ1232 isobar, and the production of a π 0 meson at rest in the nuclear coordinate system. The cross sections for the indicated processes are obtained.

Investigation of semicoherent interactions of 1-GeV protons with silicon

The observation of deeply bound pionic states of xenon produced in the d + Xenat → Xeπ−bound + 3He reaction

We report on a search for deeply bound pionic states of xenon produced in the Xenat.(d,3He)Xeπ-bound reaction at Ed = 500 MeV. In the 3He energy spectrum two peaks are observed corresponding to the production of pionic atoms in the 1s state.

The Observation of Deeply Bound Pionic States of Xenon Produced in d + AXe → A − 1Xeπ + 3He Reactions at CELSIUS

Observation of Deeply Bound Pionic States of Xenon Produced in Xenat(d, 3He)Xepi-bound Reactions

Observation of deeply bound pionic states of xenon produced in Xe nat (d, 3 He)Xe π- bound reactions

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A search for deeply bound pionic states of xenon produced in the 136Xe(d, 3He)135Xeπ-bound reaction

The observation of deeply bound pionic states of xenon produced in the d + Xenat → Xeπ−bound + 3He reaction

The Observation of Deeply Bound Pionic States of Xenon Produced in d + AXe → A − 1Xeπ + 3He Reactions at CELSIUS

Observation of deeply bound pionic states of xenon produced in Xe nat (d, 3 He)Xe π- bound reactions