We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7 × 1 0 14 neq/cm 2 up to 4.5 × 1 0 15 neq/cm 2 . The result indicates that the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient cA=(5.52±0.58)×10 − 16  cm 2 , which shows the NDL sensor has fairly good radiation resistance. The time resolution of the sensors after irradiation was measured at (−30 ± 2) °C.

Radiation effects on NDL prototype LGAD sensors after proton irradiation

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

/pdf/lgad-based-silicon-sensors-for-4d-detectors-3vl5zrb8.pdf

LGAD-Based Silicon Sensors for 4D Detectors

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of Sciences (IME). Three wafers have been produced with four different gain layer implant doses each. Different production processes, including variation in the n++ layer implant energy and carbon co-implantation were used. Test results show that the IHEP-IME sensors with the higher dose of gain layer have lower breakdown voltages and higher gain layer voltages from capacitance-voltage properties, which are consistent with the TCAD simulation. Beta test results show that the time resolution of IHEP-IME sensors is better than 35ps when operated at high voltage and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for the ATLAS HGTD project. 

Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project

The thickness of the high-resistivity layer (active layer) is a crucial factor affecting the timing resolution of low gain avalanche diodes (LGADs). We studied the potential improvement of the timing resolution of charge particles based on LGADs with different active layer thicknesses. The Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) jointly designed two types of LGAD sensors with active layer thicknesses of 33 and 50 $\mu \text{m}$ . The timing resolution is given by contributions from the time walk, jitter, and nonuniform charge deposition (Landau term). The jitter and the Landau term contributions in the timing resolution are extracted by the combination of the ${^{90}{Sr}}$ beta source test and the picosecond laser test. The Landau contribution is found to be the dominant contribution for both types of LGAD sensors, and the Landau contribution of the 33 $\mu \text{m}$ sensor is lower than that of the 50 $\mu \text{m}$ sensor. Based on the experimental results, we perform the simulation for thinner active layer LGAD with the WeightField2 program. The timing resolution can be further improved by reducing the active layer thickness from 33 to 20 $\mu \text{m}$ .

The Timing Resolution of IHEP-NDL LGAD Sensors With Different Active Layer Thicknesses

Low Gain Avalanche Detectors (LGAD) are silicon particle sensors with intrinsic gain through a thin p-type multiplication layer inserted between n-type implant and p-type bulk. The first prototype of LGAD sensors in China have been developed at the Institute of High Energy Physics (IHEP) of Chinese Academic Sciences and the Novel Device Laboratory (NDL) of Beijing Normal University. With an active thickness of 33 μ m, good breakdown performance, gain > 10, these sensors have reached jitter contribution of 10 ps to timing resolution with laser tests.

Characterization of the first prototype NDL Low Gain Avalanche Detectors (LGAD)

This paper studies the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences, in the context of an upgrade project of the ATLAS detector for the high luminosity phase of LHC. NDL LGAD sensors with different layouts, epitaxial resistivity and doping profile were irradiated up to 1.02 × 1015 neq/cm2 by 70 MeV protons at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD sensors reached 50 ps and the collected charge reached 3 - 4 fC after irradiation.

Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China

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Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China