Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Radiation damage in silicon detectors

The first observation of double peak (DP) electric field distribution in heavily neutron irradiated (>10 14  n/cm 2 ) semiconductor detectors has been published about 6 yr ago. However, this effect was not quantitatively analyzed up to now. The explanation of the DP electric field distribution presented in this paper is based on the properties of radiation induced deep levels in silicon, which act as deep traps, and on the distribution of the thermally generated free carrier concentration in the detector bulk. In the frame of this model, the earlier published considerations on the so-called “double junction (DJ) effect” are discussed as well. The comparison of the calculated electric field profiles at different temperatures with the experimental ones allows one to determine a set of deep levels. This set of deep levels, and their charge filling status are essential to the value and the distribution of space charge in the space charge region in the range of 305–240 K, which is actual temperature range for the main experiments at LHC where silicon detectors are used. This set of deep levels includes the levels located close to the midgap and does not contain the defects with the largest introduction rate −( C i – O i ) and ( V – V ).

The origin of double peak electric field distribution in heavily irradiated silicon detectors

Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and microstrip detectors will operate in the Large Hadron Collider.

Radiation damage in silicon detectors for high-energy physics experiments

Silicon detectors are used or going to be used as tracking devices in many high energy physics experiments. Therefore they are located close to the interaction point, where the detectors are exposed to very high particle fluxes and ionization doses, especially in future experiments with very high energies and luminosities. Ongoing investigations concerning the radiation damage, started already several years ago, include bulk and surface damage related questions. The two main objectives of these studies are: (1) predict the radiation induced change in the detector parameters expected for any application, and (2) improve the radiation hardness of the detectors. A general overview of the current progress of the radiation hardness studies towards these goals is given here.

/pdf/radiation-hardness-of-silicon-detectors-current-status-2vwm5cpexe.pdf

Radiation hardness of silicon detectors: current status

We present an investigation on the influence of the oxygen concentration on radiation-induced changes in the effective doping concentration of silicon detectors. Diodes fabricated from silicon with interstitial oxygen content ranging from below 2×10 14 to 9×10 17 cm −3 have been irradiated with fast neutrons up to a fluence of 2×10 15 cm −2 . Our main interest focused on the so-called stable damage component in the change of the effective doping concentration being of prime importance for the application of silicon detectors in high-energy physics experiments. We demonstrate, that with a high oxygen enrichment the donor removal is appreciably reduced, reaching a value of only 10% of the initial doping concentration for [O i ]=9×10 17 cm −3 , while for normal detector grade material with [O i ] below 5×10 16 cm −3 that value is 60–90%. Furthermore, we show that the fluence proportional introduction of stable acceptors is independent of the oxygen concentration with an averaged introduction rate of (1.49±0.03)×10 −2 cm −1 . Only one material was found exhibiting a significantly smaller value of about 0.6×10 −2 cm −1 and thus indicating the possibility to suppress the radiation-induced acceptor creation by material modification. Finally, we show that the experimental findings disagree in several important aspects with predictions made by microscopic defect kinetics models, leaving the physical background of some of the measured data as an open question.

Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

Neutron- and 60 Co gamma-irradiated silicon detectors have been investigated using time-resolved current transients (TCT) induced by nanosecond laser pulses. Measurements were performed as a function of operating temperature (100–300 K) and bias voltage. Illumination was done on both the junction and ohmic side, allowing the investigation of the free charge carrier transport for electrons, respectively, holes separately. In this way, temperature-dependent trapping and detrapping effects as well as related electric field transformations have been studied and enable us to extract relevant defect parameters. Results achieved for the damaged detectors are presented and discussed in comparison with DLTS data.

Investigation of damage-induced defects in silicon by TCT☆

Several n+/n/p+ pixel detectors with medium resistivity (ρ=1.9 kΩ cm) and reduced thickness (200 μm) have been characterized after irradiation up to 5×1014 n/cm2, as an extension of measurements carried out in as-processed devices in the past. Results are really satisfactory: the leakage bulk current is quite low, and no breakdown is observed up to 300 V, which is the design bias in irradiated devices. Moreover, the use of medium resistivity material gives slightly higher radiation tolerance as compared with high resistivity case.

Electrical characterization of irradiated medium resistivity n+/n/p+ pixel detectors

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

V Eremin

Author Tools

Chat about Author

Papers

Investigation of damage-induced defects in silicon by TCT☆

Electrical characterization of irradiated medium resistivity n+/n/p+ pixel detectors