V. E. Stukalova
5 Papers
V. E. Stukalova is an academic researcher. The author has contributed to research in topics: Medicine & Etching (microfabrication). The author has an hindex of 1, co-authored 4 publications.
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Papers
Low-loss silicon nitride photonic ICs for single-photon applications
K. A. Buzaverov,Aleksandr S. Baburin,E. V. Sergeev,S. S. Avdeev,Evgeniy S. Lotkov,Mihail Andronik,V. E. Stukalova,Dmitry A. Baklykov,I. V. Dyakonov,Nikolay Skryabin,M. Yu. Saygin,Sergei P. Kulik,Ilya A. Ryzhikov,I. A. R. F. Laboratory,Bauman Moscow State Technical University,Russian Federation Moscow,Russia.,D. Automatics,Quantum Technology Center,F. O. Physics,Lomonosov Moscow State University +20 more
TL;DR: In this paper , the authors report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications, and demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in singlemode silicon nitride submicron waveguides (220x550 nm).
21
Deep multilevel wet etching of fused silica glass microstructures in BOE solution
T. G. Konstantinova,Mikhail Andronic,Dmitriy A. Baklykov,V. E. Stukalova,Daria A. Ezenkova,E. Zikiy,Alexander A. Solovev,Evgeniy S. Lotkov,Ilya A. Ryzhikov,Igor A. Rodionov +9 more
TL;DR: In this article , a multilevel microstructures fabrication route based on fused silica deep etching through a stepped mask is proposed, which can be used for advanced microdevices with flexure suspensions, inertial masses, microchannels, and through-wafer holes.
Low-loss silicon nitride photonic ICs for near-infrared wavelength bandwidth.
K. A. Buzaverov,Aleksandr S. Baburin,E. V. Sergeev,S. S. Avdeev,Evgeniy S. Lotkov,Mihail Andronik,V. E. Stukalova,Dmitry A. Baklykov,I. V. Dyakonov,Nikolay Skryabin,M. Yu. Saygin,Sergei P. Kulik,Ilya A. Ryzhikov,Ilya A. Rodionov +13 more
TL;DR: In this article , the authors demonstrate the lowest propagation losses to date (as low as 0.55 dB/cm at 925nm wavelength) in single-mode silicon nitride submicron waveguides (220×550 nm), achieved by advanced e-beam lithography and inductively coupled plasma reactive ion etching steps.
8
Tunable low-loss silicon nitride integrated circuits
Aleksandr S. Baburin,Evgeniy S. Lotkov,Evgeniy V. Sergeev,M. Andronic,Dmitriy A. Baklykov,V. E. Stukalova,K. A. Buzaverov,S. S. Avdeev,Ilya A. Ryzhikov,I. V. Dyakonov,Nikolay Skryabin,M. Yu. Saygin,S. Kulik,Ilya A. Rodionov +13 more
- 20 Jun 2022
TL;DR: In this article , a tunable photonic integrated circuits platform with low losses in a wide wavelength bandwidth from 900 to 1550 nm based on SiN waveguides is presented.
3
Ontological Modeling as a Means of Enhancing the Efficiency of MEMS Creation
Yuriy B. Tsvetkov,Ilya A Rodionov,Dmitry A. Baklykov,V. E. Stukalova,Igor S. Pilnik +4 more
- 08 Apr 2025