V. Braza
University of Cádiz
31 Papers
94 Citations
V. Braza is an academic researcher from University of Cádiz. The author has contributed to research in topics: Quantum dot & Band gap. The author has an hindex of 8, co-authored 21 publications.
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Papers
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
A. D. Utrilla,Davide F. Grossi,D.F. Reyes,A. Gonzalo,V. Braza,Teresa Ben,David González,Álvaro Guzmán,Adrian Hierro,PM Paul Koenraad,JM José Maria Ulloa +10 more
TL;DR: In this article, the structural and optical properties of epitaxial quantum dot (QD) nanocrystals were tuned without the need for any capping material different from GaAs or annealing process.
31
General route for the decomposition of InAs quantum dots during the capping process.
David González,D.F. Reyes,A. D. Utrilla,Teresa Ben,V. Braza,A. Guzmán,Adrian Hierro,JM José Maria Ulloa +7 more
TL;DR: The results contradict the traditional model of QD material redistribution from the apex to the base and point to a different universal behavior of the overgrowth processes in self-organized InAs QDs.
28
Strain-balanced type-II superlattices for efficient multi-junction solar cells.
A. Gonzalo,A. D. Utrilla,D.F. Reyes,V. Braza,José M. Llorens,D. Fuertes Marrón,Benito Alén,Teresa Ben,David González,Álvaro Guzmán,Adrian Hierro,JM José Maria Ulloa +11 more
TL;DR: GaAsSb/GaAsN superlattices with short periods are the ideal (pseudo)material to be integrated in new GaAs/Ge-based multi-junction solar cells that could approach the theoretical efficiency limit.
Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.
David González,V. Braza,A. D. Utrilla,A. Gonzalo,D.F. Reyes,Teresa Ben,A. Guzmán,Adrian Hierro,JM José Maria Ulloa +8 more
TL;DR: The high Ga/In intermixing during the decomposition of buried QDs does not only trigger a reduction of the QD height, but above all, a higher impoverishment of the In content inside the QDs, therefore modifying the two most important parameters that determine the optical properties of these structures.
23
Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
TL;DR: In this article, a combination of HR-XRD and cross-sectional (S)TEM techniques together with theoretical calculations was applied to analyse the compositional distribution in GaAsSb/GaAsN superlattices with different periodicity.
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