Umesh Mishra
Cree Inc.
213 Papers
3.1K Citations
Umesh Mishra is an academic researcher from Cree Inc.. The author has contributed to research in topics: Gallium nitride & Metalorganic vapour phase epitaxy. The author has an hindex of 60, co-authored 213 publications.
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Papers
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu,Bernd Keller,Paul T. Fini,Sarah L. Keller,T. Jenkins,L. Kehias,S. P. DenBaars,Umesh Mishra +7 more
TL;DR: In this paper, the use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the Al-GaN/GaN MODFET structure.
331
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
Sarah L. Keller,Bernd Keller,Yifeng Wu,B. Heying,D. Kapolnek,James S. Speck,Umesh Mishra,Steven P. DenBaars +7 more
TL;DR: In this article, the authors investigated the effect of the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation on the dislocation structure of GaN films.
290
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
H. Marchand,X. H. Wu,J. P. Ibbetson,Paul T. Fini,Peter Kozodoy,Sarah L. Keller,James S. Speck,Steven P. DenBaars,Umesh Mishra +8 more
TL;DR: In this article, the defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy.
284
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
B. Heying,I. P. Smorchkova,Christiane Poblenz,C. R. Elsass,Paul T. Fini,S. P. Den Baars,Umesh Mishra,James S. Speck +7 more
TL;DR: In this article, the morphology and electrical properties of homoepitaxial GaN layers grown by molecular beam epitaxy at 720°C were investigated as a function of Ga/N ratio.
197
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
Sarah L. Keller,N. Fichtenbaum,Feng Wu,David F. Brown,A. Rosales,Steven P. DenBaars,James S. Speck,Umesh Mishra +7 more
TL;DR: In this paper, N-polar GaN films were grown on misoriented (0001) sapphire substrates and the development of a high temperature nucleation process was investigated.
192