Umesh K. Mishra
University of California, Santa Barbara
929 Papers
10.5K Citations
Umesh K. Mishra is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 96, co-authored 912 publications. Previous affiliations of Umesh K. Mishra include North Carolina State University & University of California.
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Papers
Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base
TL;DR: In this article, the authors demonstrate a III-nitride hot-electron transistor with an AlGaN (24%) emitter, a 10-nm GaN base, and an 8-GaN collector.
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Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors
TL;DR: In this paper, a short-gate AlGaN/GaN heterostructure field effect transistors (HFETs) with extremely thin barrier layers were fabricated and characterized from the viewpoint of millimeter-wave applications.
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Short-Circuit Capability Demonstrated for GaN Power Switches
Davide Bisi,John Gritters,Tsutomu Hosoda,Masamichi Kamiyama,Bill Cruse,YuLu Huang,J. McKay,Geetak Gupta,Rakesh K. Lal,Carl J. Neufeld,Philip Zuk,Yifeng Wu,Primit Parikh,Umesh K. Mishra +13 more
- 14 Jun 2021
TL;DR: In this article, the authors report an innovative solution for GaN power switches to achieve short-circuit withstanding time (SCWT) equal to or greater than 3 micro-seconds with limited increase in on-resistance.
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Hydrogenation of GaAs MISFETs with Al2O3 as the gate insulator
TL;DR: In this paper, a GaAs MISFET with Al 2 O 3 formed by the wetoxidation of AlAs as the gate oxide is reported, and it is observed that hydrogenation treatment proves to be effective in reducing the state density at the GaAs interface due to removal of excess arsenic, which is a possible cause of interface states.
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A GaN differential oscillator with improved harmonic performance
TL;DR: In this article, the first AlGaN/GaN HEMT-based differential oscillator is reported, and the measured phase noise is -86.3 dBc and -115.7 dBc at offsets of 100 kHz and 1 MHz respectively.