Umesh K. Mishra
University of California, Santa Barbara
929 Papers
10.5K Citations
Umesh K. Mishra is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 96, co-authored 912 publications. Previous affiliations of Umesh K. Mishra include North Carolina State University & University of California.
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Papers
Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors
Nidhi,Siddharth Rajan,Stacia Keller,Feng Wu,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +6 more
TL;DR: In this article, the Fermi level at the interface was found to be pinned at approximately 1 eV with respect to GaN conduction band edge, irrespective of the work function of the gate metal.
Enhanced mg doping efficiency in al0.2ga0.8n/gan superlattices
TL;DR: In this paper, high p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated, and the measured hole concentration at room temperature is over 25×1018 cm−3, more than ten times that obtained in bulk GaN layers.
LiNbO3 thin film growth on (0001)-GaN
TL;DR: LiNbO3 thin films were grown by rf magnetron sputtering on (0001)-GaN templates and AlGaN∕GaN structures, and the films were characterized by four-circle x-ray diffraction, atomic force microscopy (AFM), and transmission electron microscopy.
Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$
TL;DR: In this paper, the authors reported enhanced dc and small-signal RF performance of enhancement-mode (E-mode) MOS-HFETs in N-polar GaN technology with an ultrathin 5-nm GaN channel and graded AlGaN back-barrier structure with a record onresistance (Ron) of 0.66 Ω·mm.
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
Carl J. Neufeld,Samantha C. Cruz,Robert M. Farrell,Michael Iza,Stacia Keller,Shuji Nakamura,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +8 more
TL;DR: In this article, the thermal properties of In0.28Ga0.72N/GaN multiple quantum well solar cells were investigated under 1-sun AM1.5G illumination.