Umesh K. Mishra
University of California, Santa Barbara
929 Papers
10.5K Citations
Umesh K. Mishra is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 96, co-authored 912 publications. Previous affiliations of Umesh K. Mishra include North Carolina State University & University of California.
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Papers
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors
Davide Bisi,Silvia H. Chan,Xiang Liu,Ramya Yeluri,Sarah L. Keller,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Umesh K. Mishra +8 more
TL;DR: In this paper, the effects of forward bias stress and charge trapping mechanisms at oxide traps in Al2O3/GaN metaloxide-semiconductor capacitors grown in-situ by metalorganic chemical vapor deposition were investigated.
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$
TL;DR: In this paper, the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogenpolar (N-polar) GaN/AlGaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) for high power-gain cutoff frequency (fmax) was discussed.
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
Gaudenzio Meneghesso,Matteo Meneghini,Davide Bisi,Isabella Rossetto,Andrea Cester,Umesh K. Mishra,Enrico Zanoni +6 more
TL;DR: In this paper, a detailed description of trap levels located in the gate-drain surface, and in the region under the gate of AlGaN/GaN HEMTs is presented.
High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency
TL;DR: In this paper, a dual-AlN back-barrier scheme was developed using polarization engineering to provide a large total dipole moment, which allowed enhanced modulation doping for a higher 2D electron gas density without parallel conduction.