Umesh K. Mishra
University of California, Santa Barbara
929 Papers
10.5K Citations
Umesh K. Mishra is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 96, co-authored 912 publications. Previous affiliations of Umesh K. Mishra include North Carolina State University & University of California.
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Papers
Identification of Carbon-related Bandgap States in GaN Grown by MOCVD
Andrew J. Armstrong,Aaron R. Arehart,Steven A. Ringel,Brendan Jude Moran,Steven P. DenBaars,Umesh K. Mishra,James S. Speck +6 more
TL;DR: In this paper, the authors exploit the inherent ability of deep level optical spectroscopy (DLOS) to detect states near the minority carrier band edge, as well as potentially deep states associated with C in background n-type GaN.
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InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs
Robert M. Farrell,Daniel J. Friedman,Nathan G. Young,Emmett E. Perl,Nirala Singh,Jordan R. Lang,Carl J. Neufeld,Michael Iza,Samantha C. Cruz,Sarah L. Keller,William E. McMahon,Shuji Nakamura,Steven P. DenBaars,Umesh K. Mishra,John E. Bowers,James S. Speck +15 more
- 09 Jun 2013
TL;DR: In this paper, the unique advantages and challenges of fabricating hybrid InGaN-GaAs multijunction (MJ) cells for ultrahigh efficiency device designs are discussed. But the authors do not discuss the performance of the hybrid cells.
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Manufacturable 200GHz, Low Noise P+-GaInAs/N-AlInAs/GaInAs JHEMT Technology
J.B. Shealy,Takyiu Liu,M.A. Thompson,L.D. Nguyen,Umesh K. Mishra +4 more
- 13 Mar 1995
TL;DR: The Junction HEMT (JHEMT) as discussed by the authors is a simple transistor technology which exhibits high performance across a wide bias range to perform both transmit and receive operations, has high threshold uniformity to enable high density, high speed signal processing circuits, and is relatively transparent to the two commercially important family of materials, namely, GaAs and InP based.
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GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering
TL;DR: In this article, a GaN planar-doped-barrier hot-electron emitter with piezoelectric surface barrier lowering (i.e., no cesiation) was reported.
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