Umesh K. Mishra
University of California, Santa Barbara
929 Papers
10.5K Citations
Umesh K. Mishra is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 96, co-authored 912 publications. Previous affiliations of Umesh K. Mishra include North Carolina State University & University of California.
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Papers
Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films
Hongtao Xu,C. Sanabria,Nadia K. Pervez,Sarah L. Keller,Umesh K. Mishra,Robert A. York +5 more
- 06 Jun 2004
TL;DR: In this article, a C-band MMIC oscillator with GaN HEMT technology with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) film capacitors integrated as DC block capacitors has been designed, fabricated and characterized.
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Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures
A. Link,T. Graf,Roman Dimitrov,Oliver Ambacher,Martin Stutzmann,Y. Smorchkova,Umesh K. Mishra,James S. Speck +7 more
TL;DR: In this article, the authors performed Shubnikov-de Haas (SdH) and Hall effect measurements to investigate the electronic transport properties of polarisation induced 2DEGs in Al x Ga 1-x N/GaN heterostructures with alloy compositions between x = 0.10 and 0.35 and sheet carrier concentrations of up to n s = 1.05 × 10 13 cm -2.
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Patent
Iii-nitride flip-chip solar cells
Robert M. Farrell,Carl J. Neufeld,Nikholas G. Toledo,Steven P. DenBaars,Umesh K. Mishra,James S. Speck,Shuji Nakamura +6 more
- 21 Oct 2011
TL;DR: A III-nitride photovoltaic device structure and a method for fabricating the III-nite-polysilicon (III-Nite) device that increases the light collection efficiency is described in this paper.
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Surface Passivation of AlGaN/GaN HEMTs
Siddharth Rajan,Yi Pei,Zhen Cheng,Steven P. DenBaars,Umesh K. Mishra +4 more
- 23 Jun 2008
TL;DR: In this article, the authors developed a model to explain the mechanism of surface state dispersion and passivation for AlGaN/GaN HEMTs and verified it by investigating large signal operation as a function of SiNx thicknesses at different drain biases.
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Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
TL;DR: In this article, the two-dimensional electron gas (2DEG) was contacted by etching through the GaN cap and the AlGaN etchstop to eliminate the barrier and angular-evaporation of metals to achieve side-alloying.
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