A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz.

/pdf/simulation-of-an-algainas-inp-electro-absorption-modulator-1j3sg39n.pdf

Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing

: The quantum-conﬁned Stark eﬀect in 𝐼𝑛𝐴𝑠 / 𝐼𝑛 ( 𝐺𝑎 ) 𝐴𝑠 quantum dots ( 𝑄𝐷𝑠 ) using non-intentionally doped and p-doped 𝑄𝐷 barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped 𝑄𝐷 barriers lead to a better Figure of Merit ( 𝐹𝑜𝑀 ), deﬁned as the ratio of the change in absorption Δ 𝛼 for a reverse bias voltage swing to the loss at 1 𝑉 𝛼 ( 1 𝑉 ) , 𝐹𝑜𝑀 = Δ 𝛼 / 𝛼 ( 1 𝑉 ) . The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the 𝑄𝐷 barriers can lead to more than a 3 𝑥 increase in 𝐹𝑜𝑀 modulator performance between temperatures of − 73 ◦ 𝐶 to 100 ◦ 𝐶 when compared with the stack with 𝑁𝐼𝐷 𝑄𝐷 barriers.

pdf/measurement-of-the-quantum-confined-stark-effect-in-inas-in-2e5u072s.pdf

Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers

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Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers