This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.

Spin dynamics in semiconductors

In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology.

https://iopscience.iop.org/article/10.1088/0268-1242/27/8/083001/pdf

Silicon spintronics with ferromagnetic tunnel devices

Recent advances in successful operation of silicon-based devices where transport is dependent on electron magnetic moment, or “spin”, could provide a path to a future alternative for logic processing. The basics of this spin-based electronics technology are discussed and the specific methods necessary for application to silicon are described. Mirroring the Haynes-Shockley experiment, which was used sixty years ago to measure minority-carrier transport parameters in semiconductors, here we have used a four-terminal device to make fundamental measurements of spin transport parameters.

http://ieeexplore.ieee.org/iel5/4832838/4897524/04897526.pdf

Silicon spintronics

We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped silicon-on-insulator substrate. Spin injection signals in the non-local scheme were observed up to 120K, which is the highest value where band transferred spins in Si have ever been reported, and spin diffusion length was estimated to be about 2.25um at 8K. Temperature dependence and injection current dependence of the non-local voltage were also investigated. It is clarified that MgO tunnel barrier is effective for the spin injection into silicon.

Electrical Spin Injection into Silicon using MgO Tunnel Barrier

In this work we present the structural and electrical characterization of sputter-deposited CoFe(B)/MgO/Si metal-insulator-semiconductor tunneling junctions for injection and detection of spin polarized current in silicon. The multilayers have been deposited in 700 nm deep trenches, patterned in thick SiO2 dielectric, on n- and p-doped wafers. The films inside the trenches are continuous with a correlated and low roughness. The MgO barrier grows amorphous without indication of pinholes. The dc and ac transport properties of the junctions were studied as a function of temperature and frequency. A relatively high interface trap density at the MgO/Si-interface is extracted from admittance spectra measurements. Transport is dominated by majority carriers in the case of n-doped and by minority carriers for the p-doped wafers. This leads to distinct rectification characteristics for the two wafer types, which would significantly influence the spin injection efficiency of the tunneling junctions.

Characterization of embedded MgO/ferromagnet contacts for spin injection in silicon

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co70Fe30, Co40Fe40B20 and Ni80Fe20), the silicon doping density (1015 to 1018 cm−3), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 °C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current–voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

https://iopscience.iop.org/article/10.1088/0022-3727/42/14/145114/pdf

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

We investigate the magnetic properties of arrays of sputter-deposited, Co70Fe30/Ni80Fe20 and Co40Fe40B20 contacts to silicon, embedded into 42 nm thick SiO2 dielectric. The contacts have rectangular shapes with blunt edges, sub-micrometre width and different aspect ratios. They are deposited either directly on silicon, forming Schottky junctions or on top of an MgO tunnel barriers with varying thickness. The MgO and CoFeB electrode are amorphous while the CoFe/NiFe bilayer is polycrystalline. The magnetization switching characteristics are studied by means of the magneto-optical Kerr effect and magnetic force microscopy. The switching field and its distribution within the array are found to depend on the thickness of the MgO and the ferromagnet (FM). Switching is mostly determined by the contact's width by means of end domains formed at the blunt edges. An influence of the length for wider contacts is also demonstrated. Despite a small angle magnetization misalignment along the contact, the remanence is high in all cases. The switching characteristics are shown to deteriorate after high temperature annealing, especially for the amorphous CoFeB FM due to the onset of crystallization.

https://iopscience.iop.org/article/10.1088/0022-3727/42/8/085004/pdf

Magnetic properties of embedded ferromagnetic contacts to silicon for spin injection

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Characterization of embedded MgO/ferromagnet contacts for spin injection in silicon

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

Magnetic properties of embedded ferromagnetic contacts to silicon for spin injection