This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10−3 to 10.4× 10−3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10−3 to 11.6 × 10−3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. ...

dc reactive magnetron sputtering of titanium‐structural and optical characterization of TiO2 films

The present study discusses the effect of iron doping in thin films deposited by rf sputtering. Iron doping induces a structural transformation from anatase to rutile and electrical measurements indicate that iron acts as an acceptor impurity. Thermoelectric power measurement shows a transition between n-type and p-type electrical conduction for an iron concentration around 0.13 at.%. The highest p-type conductivity at room temperature achieved by iron doping was .

https://iopscience.iop.org/article/10.1088/0022-3727/31/10/004/pdf

Structural and electrical properties of Fe-doped thin films

Titanium dioxide (TiO2) thin films have been deposited on silicon and glass substrates by the sol-gel process using titanium iso-propoxide [Ti(O-i-C3H7)4]. The bond configuration of the TiO2 thin films was analyzed by using FTIR in the wavenumber range from 400 to 4000 cm−1. The spectral transmittance of as-deposited TiO2 films deposited on fused silica glass was measured in the wavelength range from 200 to 900 nm. X-ray diffraction measurements were performed to determine the crystallinity of the TiO2 films. As-deposited films were amorphous. As the film was annealed at higher temperature, the structure was transformed from amorphous to the anatase crystalline state. The chemical composition of the deposited film was investigated using X-ray photoelectron spectroscopy (XPS). The films are essentially stoichiometric with carbon as the dominant impurity on the surface. Raman spectra show the characteristic of TiO2 anatase phase. The electrical properties of the TiO2 films were measured using capacitance-voltage (C-V) and current-voltage techniques. From C-V measurements, the dielectric constants were calculated to be approximately 26 for the as-deposited films and 75–82 for films annealed at 700°C in different atmosphere. For the as-deposited samples, the breakdown voltage was 2.7 MV/cm, and for an electric field of 1 MV/cm, the leakage current was 5 × 10−5 A/cm2 and the resistivity was 2.2 × 1010 Ω-cm.

Preparation and Characterization of TiO2 Thin Films by Sol-Gel Method

The effect of target density and its morphology on TiO2 thin films grown on Si(100) by PLD

We present some recent trends about research on gas sensors based on semiconducting thin films based on Ti, W, and Mo mixed oxides. The structural, electrical and gas-sensing properties of these films, deposited by rf reactive sputtering from composite targets of W–Mo, Ti–W and Ti–Mo at different abundance, were investigated through electron microscopy and volt-amperometric techniques. All of these layers showed sensing capability toward CO, NO2 or ethanol. The thin films obtained were able to detect CO, NO2, and ethanol below the concentration limit for environmental-monitoring and breath-analysis application.

Nanostructured mixed oxides compounds for gas sensing applications

Investigations of TiO2 films deposited by different techniques

Stress in thin films has been measured very precisely (< 10 MPa) by analysing the curvature of quartz glass substrates before and after film deposition by means of a ZYGO Mark IV interferometer system. TiO2 films of approximately 100 nm thickness were prepared by reactive evaporation (RE), reactive ion plating (IP), plasma impulse chemical vapor deposition (PICVD) and spin coating (SC). Large variations in stress are found for different coating techniques and deposition conditions. This can be correlated to differences in optical properties, film density and crystalline structure. Relaxation effects and the influence of thermal treatment are also studied. The crystallization of amorphous TiO2 during heat treatment is accompanied by significant changes in film stress. The crystal size and morphology of TiO2 films after heat treatment strongly depend on the deposition technique and process conditions.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400320498

Stress of Tio2 Thin Films Produced by Different Deposition Techniques

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Investigations of TiO2 films deposited by different techniques

Stress of Tio2 Thin Films Produced by Different Deposition Techniques