Tuomas Haggren
Australian National University
47 Papers
330 Citations
Tuomas Haggren is an academic researcher from Australian National University. The author has contributed to research in topics: Nanowire & Passivation. The author has an hindex of 10, co-authored 38 publications. Previous affiliations of Tuomas Haggren include Aalto University.
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Papers
III–V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs
TL;DR: The use of black silicon (bSi) as a growth platform for III–V nanowires (NWs) enables low reflectance over a broad wavelength range as well as fabrication of optoelectronic devices by metalorganic vapor phase epitaxy and a new isolated growth regime for self-catalyzed InAs NWs at record-low temperatures.
High quality GaAs nanowires grown on glass substrates.
Veer Dhaka,Tuomas Haggren,Henri Jussila,Hua Jiang,Esko I. Kauppinen,Teppo Huhtio,Markku Sopanen,Harri Lipsanen +7 more
TL;DR: Growth comparison on impurity free fused silica substrate suggests unintentional doping of the nanowires from the glass substrate, and strong photoluminescence emission was observed both at low temperature and room temperature indicating a high optical quality of GaAs Nanowires.
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Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers
Tuomas Haggren,Hua Jiang,J. P. Kakko,Teppo Huhtio,Veer Dhaka,Esko I. Kauppinen,Harri Lipsanen +6 more
TL;DR: In this article, the authors demonstrate efficient surface passivation of GaAs nanowires using ultrathin in-situ grown epitaxial InP and GaP capping layers, with metallo-organic vapor phase epitaxy as the growth system.
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Protective capping and surface passivation of III-V nanowires by atomic layer deposition
Veer Dhaka,Alexander Pyymaki Perros,Shagufta Naureen,Naeem Shahid,Hua Jiang,J. P. Kakko,Tuomas Haggren,Esko I. Kauppinen,Anand Srinivasan,Harri Lipsanen +9 more
TL;DR: In this paper, low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown ALD.
Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates.
Vladislav Khayrudinov,M.A. Remennyi,Vidur Raj,Prokhor A. Alekseev,B. A. Matveev,Harri Lipsanen,Tuomas Haggren,Tuomas Haggren +7 more
TL;DR: It is demonstrated that III–V nanowires can be synthesized directly on flexible plastic substrates inside a MOVPE reactor, and it is believed that the results will further advance the development of the nanowire-based flexible electronic devices.
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