Torsten E.M. Staab
University of Bonn
63 Papers
468 Citations
Torsten E.M. Staab is an academic researcher from University of Bonn. The author has contributed to research in topics: Positron & Vacancy defect. The author has an hindex of 21, co-authored 61 publications. Previous affiliations of Torsten E.M. Staab include Fraunhofer Society & University of Würzburg.
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Papers
Probing lithium-ion batteries' state-of-charge using ultrasonic transmission – Concept and laboratory testing
Lukas Gold,Tobias Bach,Wolfgang Virsik,Angelika Schmitt,Jana Müller,Torsten E.M. Staab,Torsten E.M. Staab,Gerhard Sextl,Gerhard Sextl +8 more
TL;DR: In this article, raised cosine pulses are applied to lithium-ion battery pouch cells, whose signals are sensitive to changes in porosity of the graphite anode during charging/discharging and, therefore, to the state-of-charge.
175
Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC
TL;DR: In this paper, the electronic and atomic structures of monovacancies and antisite defects in 4H-SiC in all possible charge states were analyzed using a plane-wave pseudopotential method based on density-functional theory and local spin-density approximation.
165
Divacancy in 3C- and 4H-SiC: An extremely stable defect
TL;DR: In this article, the formation energies and stability of divacancy defects in cubic and hexagonal lattice sites were determined for neutral as well as for charged states, and the Madelung-type correction was applied to deal with the electrostatic interactions between supercells.
75
The data treatment influence on the spectra decomposition in positron lifetime spectroscopy Part 1: On the interpretation of multi-component analysis studied by Monte Carlo simulated model spectra
TL;DR: In this article, the authors investigated the decomposability of multi-component positron lifetime spectra generated by Monte Carlo simulations and verified that the decrease of the longer lifetime τ 2 with lower temperature is an artifact of the two-component decomposition of real three-component spectrum.
47
Defect identification in GaAs grown at low temperatures by positron annihilation
J. Gebauer,F. Börner,Reinhard Krause-Rehberg,Torsten E.M. Staab,W. Bauer-Kugelmann,Gottfried Kögel,Werner Triftshäuser,Petra Specht,R. C. Lutz,Eicke R. Weber,Martina Luysberg +10 more
TL;DR: In this paper, the positron annihilation was used to study vacancy defects in GaAs grown at low temperatures (LT-GaAs), and the vacancies in as-grown LT-GaA were identified to be Ga monovacancies, VGa, according to their positron lifetime and annihilation momentum distribution.