Sensor technology has an important effect on many aspects in our society, and has gained much progress, propelled by the development of nanoscience and nanotechnology. Current research efforts are directed toward developing high-performance gas sensors with low operating temperature at low fabrication costs. A gas sensor working at room temperature is very appealing as it provides very low power consumption and does not require a heater for high-temperature operation, and hence simplifies the fabrication of sensor devices and reduces the operating cost. Nanostructured materials are at the core of the development of any room-temperature sensing platform. The most important advances with regard to fundamental research, sensing mechanisms, and application of nanostructured materials for room-temperature conductometric sensor devices are reviewed here. Particular emphasis is given to the relation between the nanostructure and sensor properties in an attempt to address structure-property correlations. Finally, some future research perspectives and new challenges that the field of room-temperature sensors will have to address are also discussed.

Nanostructured Materials for Room-Temperature Gas Sensors

A gas sensor based on PbS colloidal quantum dots (CQDs) is constructed on a paper substrate, yielding flexible, rapid-response NO₂ gas sensors, fabricated from the solution phase. The devices are highly sensitive and fully recoverable at room temperature, which is attributed to the excellent access of gas molecules to the CQD surface, realized by surface ligand removal, combined with the desirable binding energy of NO₂ with the PbS CQDs.

/pdf/physically-flexible-rapid-response-gas-sensor-based-on-4bwegcekkz.pdf

Physically Flexible, Rapid‐Response Gas Sensor Based on Colloidal Quantum Dot Solids

The strong and controllable chemical sensitivity of organic semiconductors (OSCs) and the amplification capability of transistors in circuits make use of OSC-based field-effect transistors compelling for chemical sensors. Analytes detected and assayed range from few-atom gas-phase molecules that may have adverse health and security implications to biomacromolecules (proteins, nucleic acids) that may be markers for physiological processes and medical conditions. This review highlights recent progress in organic field-effect transistor (OFET) chemical sensors, emphasizing advances from the past 5 years and including aspects of OSC morphology and the role of adjacent dielectrics. Design elements of the OSCs and various formats for the devices are illustrated and evaluated. Challenges associated with the present state of the art and future opportunities are also discussed.

Chemical and Biomolecule Sensing with Organic Field-Effect Transistors

Chemi-resistive sensors based on hybrid functional materials are promising candidates for gas sensing with high responsivity, good selectivity, fast response/recovery, great stability/repeatability, room-working temperature, low cost, and easy-to-fabricate, for versatile applications. This progress report reviews the advantages and advances of these sensing structures compared with the single constituent, according to five main sensing forms: manipulating/constructing heterojunctions, catalytic reaction, charge transfer, charge carrier transport, molecular binding/sieving, and their combinations. Promises and challenges of the advances of each form are presented and discussed. Critical thinking and ideas regarding the orientation of the development of hybrid material-based gas sensor in the future are discussed.

/pdf/gas-sensors-based-on-chemi-resistive-hybrid-functional-i76a6c6prl.pdf

Gas Sensors Based on Chemi-Resistive Hybrid Functional Nanomaterials

The remarkable merits of 2D materials with atomically thin structures and optoelectronic attributes have inspired great interest in integrating 2D materials into electronics and optoelectronics. Moreover, as an emerging field in the 2D-materials family, assembly of organic nanostructures into 2D forms offers the advantages of molecular diversity, intrinsic flexibility, ease of processing, light weight, and so on, providing an exciting prospect for optoelectronic applications. Herein, the applications of organic 2D materials for optoelectronic devices are a main focus. Material examples include 2D, organic, crystalline, small molecules, polymers, self-assembly monolayers, and covalent organic frameworks. The protocols for 2D-organic-crystal-fabrication and -patterning techniques are briefly discussed, then applications in optoelectronic devices are introduced in detail. Overall, an introduction to what is known and suggestions for the potential of many exciting developments are presented.

2D Organic Materials for Optoelectronic Applications

A heterojunction device which has good transport characteristics and low sensitivity is obtained through two kinds of organic molecules inert to NO2 . Using the heterojunction device, constructing more-sensitive double-heterojunction devices can obtain better room-temperature detection characteristics.

A High‐Performance Room‐Temperature NO2 Sensor Based on An Ultrathin Heterojunction Film

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature. At high substrate temperature (>60 °C), the mechanism of diffusion-limited aggregation controlled the growth of submonolayer thin film with fractal islands, whereas at low substrate temperature (≤60 °C), the submonolayer thin film was composed of the compact islands. Its growth exhibited another growth mechanism in which the stable compact islands were formed by dissociation and reorganization of the metastable disordered film. The substrate temperature of about 180 °C ma...

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 °C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 µm2. Its saturated island density (0.018µm−2) is much smaller than that of the second-layer film (0.088µm−2), which begins to show the Volmer−Weber growth mode. The characteristic of liquid-like crystal of p-6P monolayer film and the adequate diffusion of p-6P molecules dominate the formation of large-size domain. The coalescence of large-size domains offers the possibility to grow high-quality p-6P monolayer film which provides excellent substrate for weak epitaxy growth of phthalocyanine compounds.

Ultrathin-Film Growth of para-Sexiphenyl (II): Formation of Large-Size Domain and Continuous Thin Film

High performance of rubrene thin film transistor by weak epitaxy growth method

Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively. The surface geometrical channels of p-6P substrate dominated the oriented nucleation and growth of H2Pc film. Consequently, the H2Pc film showed incommensurate and commensurate epitaxy on p-6P ultrathin films.

Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films.

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