Although lead-based inorganic–organic perovskite solar cells (PSCs) have delivered the highest power conversion efficiency (PCE) to date of 25.2%, the toxic nature of lead and poor stability are th...

Recent advances in Cs2AgBiBr6-based halide double perovskites as lead-free and inorganic light absorbers for perovskite solar cells

Lead-free double perovskite materials have attracted much interest for optoelectronic applications due to their nontoxicity and high stability. In this work, centimetre-sized Cs2AgBiBr6 single crystals were successfully grown using methylammonium bromide (MABr) as the flux by a top-seeded solution growth (TSSG) method. The low-temperature crystal structure of Cs2AgBiBr6 single crystals was determined and refined. To investigate the interface problems between Cs2AgBiBr6 single crystals and electrodes, the optical band gap, X-ray photoelectron spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) measurements were performed on Cs2AgBiBr6 single crystals. More importantly, we investigated the photodetectors based on Cs2AgBiBr6 single crystals with different contact electrodes (Au, Ag, and Al). It is found that a good Ohmic contact with Ag electrodes enables excellent photo-response behaviors. Furthermore, we studied the photodetectors based on Cs2AgBiBr6 single crystals using Ag electrodes under room and low temperature conditions, which underwent phase transition. Cs2AgBiBr6 single crystal photodetectors show clear differences at room and low temperatures, which is caused by the work function changes of Cs2AgBiBr6 single crystals induced by the reversible phase transition. These attractive properties may enable opportunities to apply emerging double perovskite single-crystalline materials for high-performance optoelectronic devices.

/pdf/interface-engineering-strategies-towards-cs2agbibr6-single-19m88dra02.pdf

Interface engineering strategies towards Cs2AgBiBr6 single-crystalline photodetectors with good Ohmic contact behaviours

Progress of Lead‐Free Halide Perovskites: From Material Synthesis to Photodetector Application

Due to their nontoxicity, stability, and unique optoelectronic properties, all-inorganic lead-free halide semiconductors with perovskite and perovskite-like structures have successfully emerged as promising optoelectronic materials for various applications, such as solar cells, light-emitting diodes (LEDs), photodetectors, and X-ray detectors. To further explore their practical potentials, researchers have paid more attention in all-inorganic lead-free perovskite (-like) (ILFP) single crystals. For these single crystals, the advantages of large sizes, uniform surface morphology, and few defects can facilitate their excellent performances and practical applications. Besides, compared with the low dimensional and polycrystalline ILFP materials, the ILFP single crystals feature enhanced performances, including a longer carrier diffusion length and a larger light absorption coefficient, which attract a great deal of attention. Therefore, focus is on the researching progress of ILFP single crystals and the development of their preparation methods, as well as the novel properties of ILFP single crystals. In addition, the reported applications of ILFP single crystals are proposed to highlight their practical importance. With the perspective of the evolution and challenges, the current limitations of the materials and devices are discussed, followed by an inspirational outlook on their future development directions.

All‐Inorganic Lead‐Free Perovskite(‐Like) Single Crystals: Synthesis, Properties, and Applications

Low-temperature process for self-powered lead-free Cs2AgBiBr6 perovskite photodetector with high detectivity

Halide perovskites have attracted worldwide attention in recent years due to their fundamental scientific importance and practical applications in energy harvesting fields. However, its toxicity and instability are hindering the commercial applications of halide perovskite-based devices. Recently discovered inorganic lead-free Cs2AgBiBr6 double perovskite exhibits excellent optical and electronic properties and can be considered as a candidate for photovoltaic devices. In this work, we report the photoelectric performance of the Cs2AgBiBr6 single crystal as a photodetector both macro- and microscopically. By utilizing a nanoscale probe as a top electrode, it is discovered that the photogenerated carriers are effectively collected, as in the case of macroscopic electrodes. More importantly, the photocurrent is enhanced as the applied nanoscale mechanical load increases, which indicates that the local bandgap of the Cs2AgBiBr6 single crystal decreases with the increased nanoscale stress, showing similar tendency with the first-principles calculation result. The reported finding establishes a strategy to enhance the performance of photodetectors, which will be a great help in improving the performance of future optoelectronic devices and energy harvesting devices at the nanoscale.

Local stress enhanced photocurrent of visible light photo-detection in Cs2AgBiBr6 single crystal

The diode behavior of ferroelectric materials was shown to be enhanced using aqueous solution treatment of their surface. The electric current increased for both BaTiO3 and BiFeO3 nano-films after being treated with aqueous solution as compared with their as-grown films. The hydroxyl groups were confirmed to be successfully bonded on the surface, which increased the concentration of oxygen vacancies near the film surface. The rectifying diode effect can be associated with the polarization direction and the movement and redistribution of oxygen vacancies within the ferroelectric thin films. Further the enhanced diode effect for the hydroxylated film was attributed to the increased oxygen vacancies near the top electrode/film interface. The reported finding helps us understand the role of water as the most common polar molecule in the atmosphere on the ferroelectric materials that exist in many industrial devices. This will provide a low-cost strategy for improving the performance of resistive memory.

Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films

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Local stress enhanced photocurrent of visible light photo-detection in Cs2AgBiBr6 single crystal

Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films