Tomoyuki Okada
Hamamatsu Photonics
29 Papers
375 Citations
Tomoyuki Okada is an academic researcher from Hamamatsu Photonics. The author has contributed to research in topics: Tube (container) & Photomultiplier. The author has an hindex of 11, co-authored 29 publications.
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Papers
Discovery of New Layered Iron Arsenide Superconductor (Ca,Pr)FeAs2
Hiroyuki Yakita,Hiraku Ogino,Tomoyuki Okada,Akiyasu Yamamoto,Kohji Kishio,Tetsuya Tohei,Yuichi Ikuhara,Yoshito Gotoh,Hiroshi Fujihisa,Kunimitsu Kataoka,Hiroshi Eisaki,Jun-ichi Shimoyama +11 more
TL;DR: In this article, a new iron-based superconductor (Ca,Pr)FeAs2 was discovered and plate-like crystals of the new phase were obtained and crystal structure was investigated by single-crystal X-ray diffraction analysis.
88
Patent
X-ray tube
Akira Matsumoto,Kiyoyuki Deguchi,Yoshihisa Marushima,Yuuichi Kogure,Kazuhito Nakamura,Tomoyuki Okada,Fujita Toru,Tatsuya Nakamura +7 more
- 07 Jul 1999
TL;DR: An X-ray tube includes a radiopaque substrate including a window portion, an Xray transmission window closing the window portion and a Xray target provided at the window from an inner surface side of the substrate, a highly-evacuated container portion attached to the inner surface of a substrate and a cathode, a first control electrode and a second control electrode provided inside the container portion as mentioned in this paper.
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Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
Yuki Shimahara,Hideto Miyake,Kazumasa Hiramatsu,Fumitsugu Fukuyo,Tomoyuki Okada,Hidetsugu Takaoka,Harumasa Yoshida +6 more
TL;DR: In this article, an ultraviolet (UV)-light-source tube using a Si-doped AlGaN film as a target of electron beam excitation was fabricated, and its optical properties were evaluated by excitation with a 10 kV electron beam (EB).
65
Patent
X-ray generator
Tomoyuki Okada,Yoshitoshi Ishihara +1 more
- 30 May 2002
TL;DR: In this paper, a high-resolution transmission type X-ray tube was provided by using electron lens forming part 100 A including a central axis part 131, which is formed at the interior of a yoke 130, and an outer peripheral part 133, which defines the outer periphery of yoke130.
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Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
Yuki Shimahara,Hideto Miyake,Kazumasa Hiramatsu,Fumitsugu Fukuyo,Tomoyuki Okada,Hidetsugu Takaoka,Harumasa Yoshida +6 more
TL;DR: In this article, the growth of Si-doped AlGaN on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) with an in situ monitoring system was reported.
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