Wide bandgap (WBG) device-based power electronics converters are more efficient and lightweight than silicon-based converters. WBG devices are an enabling technology for many motor drive applications and new classes of compact and efficient motors. This paper reviews the potential applications and advances enabled by WBG devices in ac motor drives. Industrial motor drive products using WBG devices are reviewed, and the benefits are highlighted. This paper also discusses the technical challenges, converter design considerations, and design tradeoffs in realizing the full potential of WBG devices in motor drives. There is a tradeoff between high switching frequency and other issues such as high dv/dt and electromagnetic interference. The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt , and the reliability of WBG devices are discussed.

Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges

This paper presents the technological advancements of the electric vehicles (EVs) all over the world. The first emphasis is on the various types of the EVs along with the energy management strategies (EMSs). The EVs are equipped with different energy storage elements such as lithium-ion batteries, super capacitors (SCs) and fuel cells (FCs). Hence, it is important to optimize the power split between the various energy storage systems (ESSs) under the complex driving conditions. The second imperative aspect is the utilization of the energy efficient wide bandgap (WBG) semiconductor technology. The WBG materials present the superior properties like wide bandgap, high saturated drift velocity and high critical breakdown field. This has led a path for the development of SiC and GaN based power semiconductor devices (PSDs). However, this paper mainly focuses on the utilization of the SiC devices for the EV applications. The substantial features of the various SiC devices are presented along with the performance aggrandization methods. Furthermore, this paper presents the updated survey and various performance measures of the SiC based power converter topologies. It also emphasizes the necessity of energy optimization for the EV charging systems. On the other hand, the burning issues associated with the SiC power modules other than the power converters are explored in detail. This extensive literature survey provides insightness for the design and research engineers in view of fulfilling the research gaps between the current and the desired targets. 

A review on energy efficient technologies for electric vehicle applications

This article presents a comprehensive design and validation of a compact all-silicon carbide (SiC) 250-kW T-type traction inverter with a power density of 25 kW/l and 98.5% peak efficiency. All the operation modes and switching transitions in a T-type phase leg are analyzed to model the semiconductor power losses over a fundamental cycle. Special attention has been paid to investigate the behavior and losses due to the reverse conduction of the SiC MOSFETs. Then a loss model is built based upon this analysis to calculate the device loss distribution and system efficiency, which is further used to determine the optimal switching frequency. In addition, detailed inverter system design and prototyping procedure, including the selection of SiC modules and dc-link capacitors, and the optimization of a four-layer laminated busbar, are presented. In this article, the T-type phase leg is formed by a normal half-bridge module and a common-source module. The switching performance and losses in this configuration are different from two-level topology that only uses one SiC module. Therefore, the switching performance and the associated switching energy in each switch position are characterized using a custom clamped inductive load (CIL) test setup designed for a T-type phase leg. The performance of the full power traction inverter prototype has been verified experimentally using pulse testing and continuous power testing.

Design and Validation of A 250-kW All-Silicon Carbide High-Density Three-Level T-Type Inverter

A sustained effort is required to realize the aggressive targets of electrification of heavy equipment, e.g., the heavy-duty off-road vehicles, due to numerous emerging challenges, which are different from those in the automotive industry. Heavy equipment manufacturers are increasingly investing in new generation of power electronics technology to fulfill the high performance and reliability targets under harsh environments while reducing fuel consumption and staying cost competitive. In this work, a holistic power electronic circuits design is proposed to achieve 4× power density at 98% peak efficiency for a compact 250 kW three-phase three-level (3-L) T-type traction inverter. The proposed T-type inverter is designed using the best in class silicon carbide (SiC) power modules. Most importantly a multi-objective optimization approach to trade the volumetric power density (kW/l) against SiC device type (650, 900 and 1200 V), dc bus voltage, switching frequency, the size of the passives components. T-type inverter system design guidance is given in this work, including loss calculation, dc-link capacitor selection, thermal management solution, and bussing structure. In addition, the hardware-in-the-Ioop simulation study is performed to validate the performance of the control system designed for the traction inverter.

A Compact 250 kW Silicon Carbide MOSFET based Three-Level Traction Inverter for Heavy Equipment Applications

Wide bandgap materials are having a transformational impact on the electrical, thermal, and mechanical performance of military, industrial, and commercial power electronic systems where silicon (Si) power semiconductors are the present material technology of choice. This paper reports on the design, analysis, and experimental verification of a compact allsilicon carbide (SiC)-based inverter to meet the inhospitable environmental demands of hybrid, plug-in hybrid, extended-range electrified vehicles, and fuel cell vehicle architectures. The compact 4.8 L, 6.6 kg inverter achieves a volumetric and gravimetric power density of 23.1 kVA/L and 16.8 kVA/kg, respectively. Three 1200 V, 3.6 mΩ, half-bridge power modules, each containing seven 25 mΩ SiC MOSFETs and six 50 A Schottky barrier diodes (SBDs) per switch position, comprise the power stage. Significant improvement in conduction, switching, and reverse-recovery losses allowed this SiC MOSFET-based inverter to achieve 96.3% average efficiency and 98.9% average peak efficiency over all experiments. This is superior to Si IGBT-based inverters throughout the entire range of torques, speeds, and bus voltages — and especially at light load operating points typical of electric vehicles. Dynamometer experiments used a 20 kHz switching frequency, double-update space-vector modulation, thermal controls for ambient and coolant temperatures, custom data acquisition, and a commercial three-phase power meter to collect performance data over 500 to 6000 RPM, 5 to 180 N-m, four bus voltages, and six thermal cases.

A compact 110 kVA, 140°C ambient, 105°C liquid cooled, all-SiC inverter for electric vehicle traction drives

This paper reports on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands of hybrid, plug-in hybrid, and extended-range electrified vehicle architectures. Significant performance improvement, via conduction, switching, and reverse-recovery loss metrics, from this SiC MOSFET-based inverter — especially at light load conditions — will be discussed.

A 200 kVA electric vehicle traction drive inverter having enhanced performance over its entire operating region

In this paper, we describe the system-level packaging of a 30 kW continuous, 55 kW peak, traction inverter to showcase the electro-thermal-mechanical performance enhancements of silicon carbide (SiC), a wide bandgap (WBG) semiconductor, over silicon. Higher efficiency, larger gravimetric and volumetric power densities, and smaller thermal management system requirements may be achieved through higher operating junction temperatures afforded by SiC versus silicon power devices. By applying advanced system-level packaging techniques, high-temperature control circuitry, utilizing 105°C-rated capacitors, and reducing the number of system interconnects and attaches to enable higher system reliability, a substantial cost reduction from the die level to the system level can be demonstrated by completely eliminating an electric vehicle’s secondary low-temperature cooling loop. The endgame is to reduce the traction inverter size (≥ 13.4 kW [peak]/L), weight (≥ 14.1 kW [peak]/kg), and cost (≤ $182/100,000) relative to output power while maintaining 15-year reliability metrics [1].Copyright © 2015 by ASME

System-Level Packaging of Wide Bandgap Inverters for Electric Traction Drive Vehicles

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A 200 kVA electric vehicle traction drive inverter having enhanced performance over its entire operating region

System-Level Packaging of Wide Bandgap Inverters for Electric Traction Drive Vehicles