Todd H. Stievater
United States Naval Research Laboratory
176 Papers
603 Citations
Todd H. Stievater is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Photonics & Waveguide (optics). The author has an hindex of 26, co-authored 155 publications. Previous affiliations of Todd H. Stievater include University of Michigan & United States Department of the Navy.
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Papers
An All-Optical Quantum Gate in a Semiconductor Quantum Dot
Xiaoqin Li,Yanwen Wu,Duncan G. Steel,Daniel Gammon,Todd H. Stievater,D. S. Katzer,Doewon Park,Carlo Piermarocchi,L. J. Sham +8 more
TL;DR: C coherent optical control of a biexciton (two electron-hole pairs), confined in a single quantum dot, that shows coherent oscillations similar to the excited-state Rabi flopping in an isolated atom is reported.
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Biexciton quantum coherence in a single quantum dot.
Gang Chen,Todd H. Stievater,E. T. Batteh,Xiaoqin Li,Duncan G. Steel,D. Gammon,D. S. Katzer,Doewon Park,L. J. Sham +8 more
TL;DR: Nondegenerate (two-wavelength) two-photon absorption using coherent optical fields is used to show that there are two different quantum mechanical pathways leading to formation of the biexciton in a single quantum dot.
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Waveguide-enhanced Raman spectroscopy of trace chemical warfare agent simulants.
Nathan F. Tyndall,Todd H. Stievater,Dmitry A. Kozak,Kee Koo,R. Andrew McGill,Marcel W. Pruessner,William S. Rabinovich,Scott A. Holmstrom +7 more
TL;DR: Waveguide-enhanced Raman spectra from trace concentrations of four vapor-phase chemical warfare agent simulants are measured, and a finite-element model is used to explain the polarization and wavelength properties of the differential spectra.
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Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches
TL;DR: In this article, a cryogenic etch process using low temperature (T⩽−100°C) and SF6 and O2 gases is presented for fabricating high aspect ratio silicon microstructures, including photonic devices and micro- and nanoelectromechanical systems.
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A surface-normal coupled-quantum-well modulator at 1.55 /spl mu/m
TL;DR: In this paper, a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator with a contrast ratio in excess of 1.5 at only 6 V was demonstrated.
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