We describe an ab initio method for calculating the electronic structure, electronic transport, and forces acting on the atoms, for atomic scale systems connected to semi-infinite electrodes and with an applied voltage bias. Our method is based on the density-functional theory (DFT) as implemented in the well tested SIESTA approach (which uses nonlocal norm-conserving pseudopotentials to describe the effect of the core electrons, and linear combination of finite-range numerical atomic orbitals to describe the valence states). We fully deal with the atomistic structure of the whole system, treating both the contact and the electrodes on the same footing. The effect of the finite bias (including self-consistency and the solution of the electrostatic problem) is taken into account using nonequilibrium Green's functions. We relate the nonequilibrium Green's function expressions to the more transparent scheme involving the scattering states. As an illustration, the method is applied to three systems where we are able to compare our results to earlier ab initio DFT calculations or experiments, and we point out differences between this method and existing schemes. The systems considered are: (i) single atom carbon wires connected to aluminum electrodes with extended or finite cross section, (ii) single atom gold wires, and finally (iii) large carbon nanotube systems with point defects.

/pdf/density-functional-method-for-nonequilibrium-electron-2m3kqra8o3.pdf

Density-functional method for nonequilibrium electron transport

http://myweb.rz.uni-augsburg.de/~eckern/WEH-287/ABSTRACTS/ruitenbeek.pdf

Quantum properties of atomic-sized conductors

Ab initio computational methods for electronic transport in nanoscaled systems are an invaluable tool for the design of quantum devices. We have developed a flexible and efficient algorithm for evaluating I-V characteristics of atomic junctions, which integrates the nonequilibrium Green’s function method with density functional theory. This is currently implemented in the package SMEAGOL. The heart of SMEAGOL is our scheme for constructing the surface Green’s functions describing the current-voltage probes. It consists of a direct summation of both open and closed scattering channels together with a regularization procedure of the Hamiltonian and provides great improvements over standard recursive methods. In particular it allows us to tackle material systems with complicated electronic structures, such as magnetic transition metals. Here we present a detailed description of SMEAGOL together with an extensive range of applications relevant for the two burgeoning fields of spin and molecular electronics.

/pdf/spin-and-molecular-electronics-in-atomically-generated-4pemerbpje.pdf

Spin and molecular electronics in atomically generated orbital landscapes

The mechanism of templateless growth of anisotropic nanostructures consisting of high-symmetry crystals is an important fundamental problem with technological consequences.The bottom-up approach for building nanostructures relies on the ability to produce shape-controlled building blocks and their subsequent assembly into mesoscale architectures. Onedimensional nanostructures in the form of nanowires and nanorods are especially important building blocks owing to the multitude of interesting properties that they exhibit. The literature is replete with techniques for producing high-quality semiconductor nanowires with controlled diameters and roughness for potential use as biosensors, logic circuits, field-effect transistors, and nonvolatile memory elements.

Ultrafine Single‐Crystalline Gold Nanowire Arrays by Oriented Attachment

We performed atomistic simulations to study the effect of free surfaces on the yielding of gold nanowires. Tensile surface stresses on the surfaces of the nanowires cause them to contract along the length with respect to the bulk face-centered cubic lattice and induce compressive stress in the interior. When the cross-sectional area of a (100) nanowire is less than 2.45 nm x 2.45 nm, the wire yields under its surface stresses. Under external forces and surface stresses, nanowires yield via the nucleation and propagation of the {l_brace}111{r_brace} partial dislocations. The magnitudes of the tensile and compressive yield stress of (100) nanowires increase and decrease, respectively, with a decrease of the wire width. The magnitude of the tensile yield stress is much larger than that of the compressive yield stress for small (100) nanowires, while for small nanowires, tensile and compressive yield stresses have similar magnitudes. The critical resolved shear stress (RSS) by external forces depends on wire width, orientation and loading condition (tension vs. compression). However, the critical RSS in the interior of the nanowires, which is exerted by both the external force and the surface-stress-induced compressive stress, does not change significantly with wire width for same orientation andmore » same loading condition, and can thus serve as a 'local' criterion. This local criterion is invoked to explain the observed size dependence of yield behavior and tensile/compressive yield stress asymmetry, considering surface stress effects and different slip systems active in tensile and compressive yielding.« less

Atomistic simulations of the yielding of gold nanowires.

We have used high resolution transmission electron microscopy to determine the structure of gold nanowires generated by mechanical stretching. Just before rupture, the contacts adopt only three possible atomic configurations, whose occurrence probabilities and quantized conductance were subsequently estimated. These predictions have shown a remarkable agreement with conductance measurements from a break junction operating in ultrahigh vacuum, corroborating the derived correlation between nanowire atomic structure and conductance behavior.

http://repositorio.unicamp.br/jspui/bitstream/REPOSIP/75568/1/WOS000165118400035.pdf

Signature of atomic structure in the quantum conductance of gold nanowires.

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Signature of atomic structure in the quantum conductance of gold nanowires.