Ting Xu
Jilin University
24 Papers
16 Citations
Ting Xu is an academic researcher from Jilin University. The author has contributed to research in topics: Transistor & Non-volatile memory. The author has an hindex of 7, co-authored 12 publications.
Chat about Author
Papers
Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric
TL;DR: In this article, an ultrathin self-organized poly(styrene) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution.
39
Gate-controlled multi-bit nonvolatile ferroelectric organic transistor memory on paper substrates
TL;DR: In this article, a multi-bit OFET-nonvolatile memory (NVM) on an ordinary commercial paper substrate has been demonstrated with high mobility up to 0.92 cm−2 V−1 s−1, a distinct four-level reading IDS with a large memory margin of about one order of magnitude was achieved at low multi-level programming/erasing voltages (<40 V).
35
Ferroelectrics‐Electret Synergetic Organic Artificial Synapses with Single‐Polarity Driven Dynamic Reconfigurable Modulation
TL;DR: In this article , a ferroelectrics-electret synergetic organic synaptic p-type transistor (FESOST) is devised to improve the efficiency, flexibility, and biocompatibility of dynamic reconfigurable synapses.
28
High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin ${\text {AlO}}_{{X}}$ Interfacial Layer
TL;DR: This paper proposes a route to resolve the low mobility issue of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM) by inserting an ultrathin ${\text {AlO}}_{X}$ layer between the semiconductor film and theFerroelectric polymer film.
26