A high-quality Fe3GeTe2 single crystal with good electrical, magnetic, and electromagnetic wave absorption and shielding properties was prepared in a large quantity (10 g level) by solid-phase sintering and recrystallization method, which would promote its in-depth research and practical application. It has good room-temperature electrical properties with a mobility of 42 cm2/V·s, a sheet (bulk) carrier concentration of +1.64 × 1018 /cm2 (+3.28 × 1020 /cm3), and a conductivity of 2196.35 S/cm. Also, a Curie temperature of 238 K indicates the high magnetic transition temperature and a paramagnetic Curie temperature of 301 K shows the large ferromagnetic-paramagnetic transition zone induced by the residual short-range ferromagnetic domains. Particularly, Fe3GeTe2 is in a loosely packed state when used as a loss agent; the electromagnetic wave absorption with a reflection loss of -34.7 dB at 3.66 GHz under thin thickness was shown. Meanwhile, the absorption band can be effectively regulated by varying the thickness. Moreover, Fe3GeTe2 in a close-packed state exhibits terahertz shielding values of 75.1 and 103.2 dB at very thin thicknesses of 70 and 380 μm, and the average shielding value is higher than 47 dB, covering the entire bandwidth from 0.1 to 3.0 THz. Furthermore, by using Fe3GeTe2 as a patch, the wideband radar cross-section can be effectively reduced by up to 33 dBsm. Resultantly, Fe3GeTe2 will be a promising candidate in the electromagnetic protection field.

High-Quality Ferromagnet Fe3GeTe2 for High-Efficiency Electromagnetic Wave Absorption and Shielding with Wideband Radar Cross Section Reduction.

Advancements for organic thin film transistors: Structures, materials, performance parameters, influencing factors, models, fabrication, reliability and applications

Fe3GeTe2 provides an ideal system for the study of itinerant ferromagnetism. However, the Curie temperature (Tc) below room temperature limits its further in‐depth research and wide applications. Here, the Tc of 224 K for Fe3GeTe2 is greatly increased to 496 K for Fe3GeTe2/FeTe2/Fe3Ge by temperature‐induced self‐decomposition doping, contributing to improve the electromagnetic response for enhancing the absorption strength and bandwidth and boosting application potentials at higher temperatures. Then, to achieve the multispectral compatible strong absorption, room temperature ferromagnetic dielectric graphene@Fe3GeTe2/FeTe2/Fe3Ge absorber with 3D porous network structure is prepared by synergistic self‐assembly. It has high Tc of 443 K with strong electromagnetic synergistic loss, achieving reflection loss of −61 dB at 12.6 GHz. Moreover, its absorption loss in the terahertz band (0.1–1.6 THz) is 76 dB, and the average loss is greater than 50.4 dB. Furthermore, the absorber is very potential as stealth skin to efficiently reduce satellite RCS with a multi‐angle and multi‐band manner in the gigahertz and terahertz bands, thus achieving the purpose of stealth. Compared with the reported conventional absorbers, the absorber has a multispectral compatible strong absorption performance covering gigahertz and terahertz bands, thus very promising for electromagnetic protection of electromagnetic communication and space vehicles.

Temperature‐Induced Self‐Decomposition Doping of Fe3GeTe2 to Achieve Ultra‐High Tc of 496 K for Multispectral Compatible Strong Electromagnetic Wave Absorption

Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be introduced between the source and drain. In this paper, we investigate the performances of DG TFET with step channel thickness (SC TFET) by utilizing the 2D simulation. The asymmetry between source and drain is introduced through the step channel thickness; hence, the ambipolar behavior is expected to be relieved. The results show that the SC TFET exhibits significant reduction of ambipolar current compared with the conventional DG TFET. The mechanisms of SC TFET are thoroughly discussed to explore the physical insight. The impacts introduced by the structure parameters on onset voltage, subthreshold slope, drain current in on-state and ambipolar-state are also exhibited in determining the optimal structure.

/pdf/simulation-study-of-the-double-gate-tunnel-field-effect-k9vms08ylr.pdf

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Efficient activation of persulfate by Ti3C2 MXene QDs modified ZnFe2O4 for the rapid degradation of tetracycline.

Tunable and broadband high-performance microwave absorption of ZnFe2O4 nanoparticles decorated Ti3C2Tx MXene composites

An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (S), and central potential (0) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current–voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

http://iopscience.iop.org/article/10.7567/JJAP.57.014301/pdf

Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

Implementation of high-performance flexible electrochromic device based on polyaniline/ carbon quantum dots

For large-area electronic applications, the mechanism of the leakage current in oxide-semiconductor thin-film transistors (TFTs) has become a critical issue. In this work, the impact of the irradiation location on the photo-leakage current of zinc oxide (ZnO) TFTs is investigated. The photo-leakage current of the ZnO TFTs is not only dependent on the light irradiation but it is also dependent on the parasitic capacitance between the drain electrode and the floating gate metal. The photo-leakage current of the source-half irradiation TFT is larger than that of the drain-half irradiation TFT. To explain this phenomenon, the profile of the electric potential and the electron concentration is analyzed by two-dimensional device simulation. It is found that the floating gate metal plays the dominant role in the photo-leakage current. This research provides insight into TFT structure optimization and high-performance TFT process development.

Mechanism analysis of irradiation location dependent leakage current for zinc oxide thin-film transistors

MOF-derived Co/ZnO/C nanocomposites with excellent microwave absorption properties

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