Timur Ibrayev
Purdue University
14 Papers
67 Citations
Timur Ibrayev is an academic researcher from Purdue University. The author has contributed to research in topics: Hierarchical temporal memory & Facial recognition system. The author has an hindex of 8, co-authored 14 publications. Previous affiliations of Timur Ibrayev include Nazarbayev University.
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Papers
Hierarchical Temporal Memory Features with Memristor Logic Circuits for Pattern Recognition
TL;DR: The HTM SP realizes an optimized hardware design through the introduction of mean overlap calculations and by replacing the threshold determination in the inhibition stage with a weighted summation operator over the neighborhood of the pixel under consideration.
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Introduction to Memristive HTM Circuits
Alex Pappachen James,Timur Ibrayev,Olga Krestinskaya,Irina Dolzhikova +3 more
- 04 Apr 2018
TL;DR: Hardware designs for HTM are reviewed with specific focus on memristive HTM circuits, which illustrate effectiveness of incorporating an emerging memristor device technology to solve this open-research problem.
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Design and implication of a rule based weight sparsity module in HTM spatial pooler
Timur Ibrayev,Olga Krestinskaya,Alex Pappachen James +2 more
- 01 Dec 2017
TL;DR: This work proposes a deterministic approach of setting the input weights based on local mean intensity of pixels as a window operation to preserve feature sparsity and to increase recognition accuracy for image classification with HTM.
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TraNNsformer: Clustered Pruning on Crossbar-Based Architectures for Energy-Efficient Neural Networks
TL;DR: TraNNsformer is an integrated training framework that transforms DNNs to enable their efficient realization on MCA-based systems and is a technology-aware framework that allows mapping a given DNN to any MCA size permissible by the memristive technology for reliable operations.
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On Design of Memristive Amplifier Circuits
TL;DR: A reconfigurable set of amplifier circuits are proposed based on quantised conductance devices in combination with MOSFET devices, and show promising performance results in terms of power dissipation, on-chip area and THD values.
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