Thomas Witters
Katholieke Universiteit Leuven
65 Papers
348 Citations
Thomas Witters is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: High-κ dielectric & Metal gate. The author has an hindex of 17, co-authored 62 publications. Previous affiliations of Thomas Witters include IMEC.
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Papers
Ternary rare-earth metal oxide high-k layers on silicon oxide
Chao Zhao,Thomas Witters,Bert Brijs,Hugo Bender,O. Richard,Matty Caymax,Tassilo Heeg,Jürgen Schubert,Valeri Afanas'ev,Andre Stesmans,Darrell G. Schlom +10 more
TL;DR: In this article, the properties of high-k gate dielectrics on (100) Si were investigated using Rutherford backscattering, spectroscopic ellipsometry, x-ray diffraction, and transmission electron microscopy.
Highly reliable TaO x ReRAM with centralized filament for 28-nm embedded application
Yukio Hayakawa,Atsushi Himeno,Ryutaro Yasuhara,Werner Boullart,E. Vecchio,T. Vandeweyer,Thomas Witters,D. Crotti,Malgorzata Jurczak,S. Fujii,Satoru Ito,Yoshio Kawashima,Yuichiro Ikeda,Akifumi Kawahara,Ken Kawai,Z. Wei,S. Muraoka,Kazuhiko Shimakawa,Takumi Mikawa,Shinichi Yoneda +19 more
- 16 Jun 2015
TL;DR: For 28-nm embedded application, a TaOx-based ReRAM with precise filament positioning and high thermal stability is proposed, which succeeded for the first time in forming a filament at the cell center.
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Ovonic Threshold-Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
Sergiu Clima,Daniele Garbin,Karl Opsomer,Naga Sruti Avasarala,Wouter Devulder,Ilya Shlyakhov,Jonas Keukelier,G. L. Donadio,Thomas Witters,Shreya Kundu,Bogdan Govoreanu,Ludovic Goux,Christophe Detavernier,Valeri Afanas'ev,Gouri Sankar Kar,Geoffrey Pourtois,Geoffrey Pourtois +16 more
TL;DR: In this article, density functional theory simulations are used to identify the structural factors that define the material properties of ovonic threshold switches (OTS), and the authors show that the nature of mobility-gap trap states in amorphous Ge-rich Ge50Se50 is related to Ge-Ge bonds, whereas in Se-rich G30Se70 the Ge valence-alternating-pairs and Se lone-pair dominate.
Thermally stable integrated Se-based OTS selectors with >20 MA/cm 2 current drive, >3.10 3 half-bias nonlinearity, tunable threshold voltage and excellent endurance
Bogdan Govoreanu,G. L. Donadio,Karl Opsomer,Wouter Devulder,Valery V. Afanas'ev,Thomas Witters,Sergiu Clima,Naga Sruti Avasarala,Augusto Redolfi,Shreya Kundu,O. Richard,Diana Tsvetanova,Geoffrey Pourtois,C. Detavemier,Ludovic Goux,Gouri Sankar Kar +15 more
- 01 Jun 2017
TL;DR: In this article, the authors present integrated Se-based threshold switching selector devices, with sizes down to 50nm, which can be operated reliably at high drive current densities, exceeding 20MA/cm2, and have high half-bias nonlinearity exceeding well 103.
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Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers
Augusto Redolfi,Dimitrios Velenis,Sarasvathi Thangaraju,P. Nolmans,Patrick Jaenen,M. Kostermans,U. Baier,E. Van Besien,Harold Dekkers,Thomas Witters,N. Jourdan,A. Van Ammel,Kevin Vandersmissen,Simon Rodet,Harold Philipsen,Alex Radisic,Nancy Heylen,Youssef Travaly,Bart Swinnen,Eric Beyne +19 more
- 20 Jun 2011
TL;DR: In this paper, a 300mm industry-compliant via-middle TSV module, integrated to an advanced high-k/metal gate CMOS process platform, is presented.
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