Thomas Schwarzbäck
University of Stuttgart
26 Papers
82 Citations
Thomas Schwarzbäck is an academic researcher from University of Stuttgart. The author has contributed to research in topics: Laser & Quantum well. The author has an hindex of 10, co-authored 26 publications.
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Papers
Enhanced efficiency of AlGaInP disk laser by in-well pumping
Cherry May N. Mateo,Uwe Brauch,Thomas Schwarzbäck,Hermann Kahle,Michael Jetter,M. Abdou Ahmed,Peter Michler,Thomas Graf +7 more
TL;DR: The results demonstrate the potential of optical in-well pumping for the operation of red AlGaInP disk lasers if combined with means for efficient pump-light absorption.
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Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm
TL;DR: In this paper, an optically pumped vertical external-cavity surface-emitting laser in a compact v-shaped cavity configuration for frequency doubling to the ultraviolet (UV) spectral range at ∼330 nm was demonstrated.
23
High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL
TL;DR: In this article, a GaInP/AlGaInP multi-quantum well structure grown using metal-organic vapour-phase epitaxy was used to achieve a maximum continuous-wave optical output power of 260 mW from an optically pumped, frequency-doubled vertical-external-cavity surface-emitting laser.
21
All quantum dot mode-locked semiconductor disk laser emitting at 655 nm
TL;DR: In this article, a semiconductor disk laser mode-locked by a SESAM with emission in the red spectral range was presented, where the gain and the absorber structure were fabricated by metal-organic vapor phase epitaxy in an anti-resonant design using quantum dots as active material.
16
Comparison of AlGaInP-VECSEL gain structures
TL;DR: In this paper, a comparison of epitaxial designs for barrier pumped vertical external-cavity surface-emitting lasers in the red spectral range is presented, where the VECSEL chips are grown by metal-organic vapor-phase epitaxy as GaInP/AlGaInP multi-quantum well structures with 20 and 21 compressively strained quantum wells, respectively.
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