Thomas Mairoser
Augsburg College
17 Papers
68 Citations
Thomas Mairoser is an academic researcher from Augsburg College. The author has contributed to research in topics: Curie temperature & Epitaxy. The author has an hindex of 10, co-authored 17 publications.
Chat about Author
Papers
Is there an intrinsic limit to the charge-carrier-induced increase of the Curie temperature of EuO?
Thomas Mairoser,A. Schmehl,A. Melville,Tassilo Heeg,L. Canella,Peter Böni,Willi Zander,J. Schubert,Daniel Shai,Eric Monkman,Kyle Shen,Darrell G. Schlom,Jochen Mannhart +12 more
TL;DR: Measurements of n and T(C) of Gd-doped EuO over a wide range of doping levels show a direct correlation between n andT(C), with both exhibiting a maximum at high doping.
64
High-quality EuO thin films the easy way via topotactic transformation
Thomas Mairoser,Julia A. Mundy,Alexander Melville,Daniel Hodash,Paul Cueva,Rainer Held,Artur Glavic,Jürgen Schubert,David A. Muller,Darrell G. Schlom,A. Schmehl +10 more
TL;DR: A topotactic reduction reaction is exploited to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films ofthe same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition.
Influence of chemical doping on the magnetic properties of EuO
TL;DR: In this paper, the magnetic field dependence of the apparent ferromagnetic ordering temperature of EuO doped with $8% Gd, La, or Lu was investigated.
34
Hetero-epitaxial EuO Interfaces Studied by Analytic Electron Microscopy
Julia A. Mundy,Daniel Hodash,Alexander Melville,Rainer Held,Thomas Mairoser,David A. Muller,Lena F. Kourkoutis,A. Schmehl,Darrell G. Schlom +8 more
TL;DR: In this article, electron energy loss spectroscopy was used to identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin flip scattering.
27
Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
Thomas Mairoser,A. Schmehl,A. Melville,Tassilo Heeg,Willi Zander,Jürgen Schubert,Daniel Shai,Eric Monkman,Kyle Shen,T. Z. Regier,Darrell G. Schlom,Jochen Mannhart +11 more
TL;DR: In this article, the authors report on the charge carrier density (n) and the Curie temperature (TC) of commonly used 4.2% Gd-doped EuO films grown by molecular-beam epitaxy on (110) oriented YAlO3 substrates at various substrate temperatures (Tsub).