Thierry Billon
French Alternative Energies and Atomic Energy Commission
6 Papers
29 Citations
Thierry Billon is an academic researcher from French Alternative Energies and Atomic Energy Commission. The author has contributed to research in topics: Schottky barrier & Schottky diode. The author has an hindex of 3, co-authored 6 publications. Previous affiliations of Thierry Billon include Alternatives.
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Papers
Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration
Emmanuel Augendre,Loic Sanchez,Lamine Benaissa,Thomas Signamarcheix,Jean-Michel Hartmann,Cyrille Le Royer,Maud Vinet,William Van Den Daele,Jean-Francois Damlencourt,K. Romanjek,A. Pouydebasque,Perrine Batude,Claude Tabone,Frédéric Mazen,Aurélie Tauzin,Nicolas Blanc,Michel Pellat,Jéro^me Dechamp,Marc Zussy,P. Scheiblin,Marie-Anne Jaud,Charlotte Drazek,Cécile Maurois,M. Piccin,Alexandra Abbadie,Fabrice Lallement,Nicolas Daval,Eric Guiot,Arnaud Rigny,Bruno Ghyselen,Konstantin Bourdelle,Fabien Boulanger,Sorin Cristoloveanu,Thierry Billon,Olivier Faynot,Chrystel Deguet,Laurent Clavelier +36 more
- 25 Sep 2009
TL;DR: The recent progress in the fabrication of GeOI substrates and devices is reviewed in this article, where improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance.
20
Patent
Schottky power diode with SiCOI substrate and process for making such diode
François Templier,Thierry Billon,Nicolas Daval +2 more
- 12 Mar 2003
TL;DR: In this article, a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant was described.
6
Patent
Schottky power diode comprising a sicoi substrate and the method of producing one such diode
François Templier,Thierry Billon,Nicolas Daval +2 more
- 12 Mar 2003
TL;DR: In this article, a power junction device with a SiCOI-type substrate and a silicon carbide surface layer is described, which is insulated from a solid support by means of an insulating buried layer.
3
Fabrication of compressively-strained GeOI substrates using the Smart Cut TM technology
E. Augendre,Loic Sanchez,J.M. Hartmann,W. Van Den Daele,S. Favier,Eric Guiot,B. Ghyselen,Konstantin Bourdelle,Sorin Cristoloveanu,Thierry Billon,Laurent Clavelier +10 more
- 06 Nov 2009
TL;DR: In this paper, the Smart CutTM technology was used to reduce the threading dislocation density (TDD) in the strained Germanium-on-Insulator (c-GeOI) layer to the levels of 8·105 /cm2.
2
Patent
PROCEDE DE FABRICATION D'UN SUBSTRAT COMPOSITE DU TYPE SiCOI COMPRENANT UNE ETAPE D'EPITAXIE
Léa Di Cioccio,François Templier,Thierry Billon,Fabrice Letertre +3 more
- 01 Sep 2003
TL;DR: In this article, a procedure for fabrication of a substrat composite of the type SiCOI comprenant les etages suivantes is described. But this procedure requires a partir de 1450°C to obtain an epitaxie.