Th. Allinger
University of Kassel
11 Papers
132 Citations
Th. Allinger is an academic researcher from University of Kassel. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Spectroscopy. The author has an hindex of 6, co-authored 11 publications.
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Papers
Catalytic oxidation of Si(100) and InP(100) surfaces
TL;DR: In this paper, the catalytic oxidation of clean Si and InP(100) surfaces in the presence of a Cs overlayer has been studied by using high resolution electron energy loss spectroscopy (HREELS), photoelectron.
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Electronic effects of surface In atoms at clean and hydrogenated InP(100)4×2 surfaces
TL;DR: The InP(100) surfaces being cleaned by ion bombardment and annealing (IBA) are known to be In-rich as discussed by the authors, and exposure to atomic hydrogen gives rise to an even higher In surface content.
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Etching of GaAs(100) by Activated Hydrogen
TL;DR: In this paper, a (1 × 1)-LEED pattern was observed after a number of cleaning cycles with hydrogen, and the results clearly demonstrate that activated hydrogen is an interesting candidate for surface cleaning prior to further processing.
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Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces
F. Stietz,Th. Allinger,V.M. Polyakov,J. Woll,A. Goldmann,W. Erfurth,G. J. Lapeyre,Juergen A. Schaefer +7 more
TL;DR: The InP(100) surfaces cleaned by ion bombardment and annealing (IBA) are known to be In-rich as mentioned in this paper, and exposure to atomic hydrogen gives rise to an even higher In surface content.
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Interaction of hydrogen at GaAs(100) surfaces
TL;DR: In this article, the interaction of hydrogen at GaAs(100) surfaces has been studied at 300 and 200 K by means of high-resolution electron energy-loss spectroscopy (HREELS), low energy electron diffraction (LEED) and Auger electron spectroscopic (AES).
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