Tar-Pin Chen
University of Arkansas at Little Rock
19 Papers
19 Citations
Tar-Pin Chen is an academic researcher from University of Arkansas at Little Rock. The author has contributed to research in topics: Thin film & Raman spectroscopy. The author has an hindex of 3, co-authored 19 publications.
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Papers
Three-Dimensional Structures of MoS2 Nanosheets with Ultrahigh Hydrogen Evolution Reaction in Water Reduction
Xiumei Geng,Wei Wu,Ning Li,Weiwei Sun,Johnathan C. Armstrong,Alaa A. Al-Hilo,Matthew Brozak,Jingbiao Cui,Tar-Pin Chen +8 more
TL;DR: In this article, a robust and highly active system for hydrogen evolution reaction in alkaline solution is reported by developing MoS2 nanosheet arrays vertically aligned on graphene-mediated 3D Ni networks.
182
Enhanced synthesis of cadmium sulfide by electrodeposition in dye-sensitized solar cells
TL;DR: In this article, a simple electrodeposition (ECD) and chemical bath deposition (CBD) were used to construct a cadmium sulfide thin film (CdS TF) and cadmion sulfide nanoparticles (CcS NPs) for dye-sensitized solar cells.
10
Electrical transport properties of (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 thin films
Hom Kandel,Tar-Pin Chen,Shawn E. Bourdo,Milko Iliev,Fumiya Watanabe,Hye-Won Seo,Tito Viswanathan +6 more
TL;DR: In this article, the electrical transport properties of (110)-oriented PrBa2(Cu0.8Ga0.2)3O7 (PBCGO) thin films have been investigated.
4
Double Shottcky of NiOx/graphene/Si for enhance efficiency solar cells
Muatez Mohammed,Alaa A. Al-Hilo,Tar-Pin Chen +2 more
- 08 Jun 2014
TL;DR: In this paper, the authors used electrodeposition to fabricate a NiOx/graphene (PMS) bilayer Shottcky junction, which was then deposited on top of the NiOx and graphene bilayer to form an overall n-p junction.
4
Experimental and theoretical study on band gap tuning of Cu 2 ZnSn(S 1−x Se x ) 4 absorbers for thin-film solar cells
Weiwei Sun,Xiumei Geng,Johnathan C. Armstrong,Jingbiao Cui,Tar-Pin Chen +4 more
- 08 Jun 2014
TL;DR: In this article, a non-hydrazine solution followed by spincoating has been used to produce Cu 2 ZnSnS 4 (CZTS precursor) thin films were obtained after annealed with sulfur or selenium powders in tube furnace at 530°C.
3