As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

One-dimensional CdS nanostructures: a promising candidate for optoelectronics

Synergistic engineering of cobalt selenide and biomass-derived S, N, P co-doped hierarchical porous carbon for modulation of stable Li-S batteries

Asymmetric contacts were used to assemble extremely photosensitive and self-powered photodetectors (SPDs) on rigid and polyimide (PI) substrates based on one-dimensional (1D)-CdS nanobelts. The photoresponse characteristics of the constructed devices were outstanding, including high photosensitivity (1.54 × 106%), specific detectivity (2.36 × 1012 Jones), responsivity (36 mA W−1) and noise equivalent power (2.94 × 10−15 W Hz−1/2) with 215 μW cm−2 light irradiation, as well as having high reproducibility, environmental stability and speedy response of less than 30 ms. Flexible self-powered photodetectors (FSPDs) were also constructed on PI substrates, which had comparable photoresponse performance to the rigid one. Additionally, the as-fabricated FSPDs showed excellent folding endurance, electrical and mechanical flexural stability. Our findings suggest that the asymmetric contact device design used in this study is appropriate for high-performance FSPDs, particularly ultrafast nanodevices.

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CdS nanobelt-based self-powered flexible photodetectors with high photosensitivity

The application of composite materials that combine the advantages of carbonaceous material and metal alloy proves to be a valid method for improving the performance of lithium-sulfur batteries (LSBs). Herein iron-cobalt-nickel (FeCoNi) ternary alloy nanoparticles (FNC) that spread on nitrogen-doped carbon (NC) are obtained by a strategy of low-temperature sol-gel followed by annealing at 800 °C under an argon/hydrogen atmosphere. Benefiting from the synergistic effect of different components of FNC and the conductive network provided by the NC, not only can the "shuttle effect" of lithium polysulfides (LiPS) be suppressed, but also the conversion of LiPS, the diffusion of Li+, and the deposition of Li2S can be accelerated. Taking advantage of those merits, the batteries assembled with an FNC@NC-modified polypropylene (PP) separator (FNC@NC//PP) can deliver a high reversible specific capacity of 1325 mAh g-1 at 0.2 C and maintain 950 mAh g-1 after 200 cycles, and they can also achieve a low capacity fading rate of 0.06% per cycle over 500 cycles at 1 C. More impressively, even under harsh test conditions (the ratio of electrolyte to sulfur (E/S) = 6 μL mg-1 and sulfur loading = 4.7 mg cm-2 and E/S = 10 μL mg-1 and sulfur loading = 5.9 mg cm-2), the area capacity of batteries is still much higher than 4 mAh cm-2.

FeCoNi Ternary Nano-Alloys Embedded in a Nitrogen-Doped Porous Carbon Matrix with Enhanced Electrocatalysis for Stable Lithium-Sulfur Batteries.

Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating "excitation" and "inhibition" akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance. 

Negative Photoconductivity Transistors for Visuomorphic Computing

Here, we demonstrate that a single CdS nanobelt with numerous stacking faults, synthesized by a thermal evaporation method, can show a giant stress-response to compressive and tensile strains with an ultrahigh gauge factor of ∼104 and ultrafast millisecond response and recovery speed. After the strains were removed, more importantly, the stress can trigger a high resistance state (HRS), indicative of a nonvolatile stress sensing and memory effect. Moreover, the stress-induced HRS can return to the initial low resistance state (LRS) after a relatively large bias was subsequently applied, indicative of a bias-erasing effect. In nanostructures, numerous stacking faults, serving as trap centres, can capture and store charges. Therefore, the bulk structural defects play a crucial role in superior stress sensing accompanied by an erasable nonvolatile memory effect. Compressive strain can trigger the height of the trap barrier to decrease, whereas tensile strain can trigger it to increase. Therefore, the conductance of the CdS nanobelt regularly increases with an increase in compressive strain. In contrast, it decreases with an increase in tensile strain, showing the strain dependence of conductance. After compressive or tensile strains were removed, in addition, the total number of electrons localized in traps is also reduced, and correspondingly the conductance decreases, showing a nonvolatile stress-writing HRS memory effect. Subsequently, the charges can be injected into traps at a relatively large bias, resulting in the recovery of the LRS, namely an erasable effect. Regarding superior stress-switching accompanied by stress-writing and bias-erasing memory, a multi-defect CdS nanostructure has tremendous potential in nonvolatile stress sensing and memory applications.

Ultrahigh stress response and storage properties in a single CdS nanobelt-based flexible device for an erasable nonvolatile stress sensing and memory effect

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Ultrahigh stress response and storage properties in a single CdS nanobelt-based flexible device for an erasable nonvolatile stress sensing and memory effect