Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized

/pdf/zinc-oxide-ultraviolet-photodetectors-rapid-progress-from-3xjvpqc8fp.pdf

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.

One-dimensional CdS nanostructures: a promising candidate for optoelectronics

https://zenodo.org/record/6457936/files/Biosensors_1-s2.0-S0956566322001816-main.pdf

MXene nanoflakes decorating ZnO tetrapods for enhanced performance of skin-attachable stretchable enzymatic electrochemical glucose sensor.

CuGaS2 is one of the most excellent visible-light-active photocatalysts for CO2 reduction and water splitting. However, CuGaS2 suffers from serious deactivation in photocatalytic reactions, which is mainly due to the photo-oxidation induced self-corrosion (Cu+ to Cu2+). Here, we constructed a CuGaS2/CdS hybrid photocatalyst dominated by a Z-scheme charge transfer mechanism. The transfer of photo-generated electrons from excited nanocrystalline CdS to CuGaS2 across the coherent interface reduces Cu2+ formation and favors Cu+ regeneration. This process suppresses the deactivation of CuGaS2 and maintains high performance. Both the activity and stability of photocatalytic CO2 reduction to produce CO over the CuGaS2/CdS hybrid were remarkably improved, which was approximately 4-fold higher than CuGaS2 and 3-fold higher than CdS in converting CO2 into CO. Our study demonstrates that even using the semiconductors prone to photo-corrosion, it is possible to obtain satisfactory catalytic activity and stability by designing efficient Z-scheme-charge-transfer-type photocatalysts.

Stabilizing CuGaS2 by crystalline CdS through an interfacial Z-scheme charge transfer for enhanced photocatalytic CO2 reduction under visible light

Synergistic engineering of cobalt selenide and biomass-derived S, N, P co-doped hierarchical porous carbon for modulation of stable Li-S batteries

ZnO nanostructures are exceedingly important building blocks for nanodevices due to their wide band gap and large exciton binding energy. However, their electronic transport characteristics are unstable and unrepeatable with external environment variation. Here, we demonstrate that electron transport of an individual ZnO nanowire-based device with the two same electrodes can be controllably modulated by applying a relatively large uni-/bidirectional bias. After being modulated, moreover, their electrical properties can well be maintained at relatively low operation bias and room temperature, demonstrating a memory behavior. The presence of surface states related to lattice periodicity breaking and traps associated with oxygen vacancy (Vo) and zinc interstitial (Zni) deep-level defects plays a crucial role in tunable electron transport with a memory feature. For the single nanowire-based two-terminal device, two back-to-back connected surface barrier diodes with series resistance are formed. The filling and emptying of traps near two end electrodes can remarkably adjust the width and height of the surface barrier. At a relatively low bias, the unmodulated conductance is governed by the electron hopping of bulk traps since the height of emptied traps is higher than that of the surface barrier, whereas at a relatively large bias, it is dominated by thermion emission due to a dramatic decrease of the surface barrier width resulting from the electron injection into traps from a negative electrode. Moreover, it will be beneficial for a thin surface barrier to penetrate UV light and separate photoexcited electron-hole pairs. After being asymmetrically modulated by a unidirectional injection, it can be successfully applied to realize a self-driven UV photodetector based on a photovoltaic effect in the symmetrical two-electrode structure. Our work provides a new route to tune electrical properties of nanostructures, which may inspire the development of novel electronic and optoelectronic devices.

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes.

Single CdS nanobelt-based photodetectors are strongly dependent on bias and temperature. They not only show a strong photoresponse to close bandgap energy light with ultrahigh responsivity of approximately 107 A W−1, large photo-to-dark current ratio of 104, photoconductive gain of 107, and fast response and recovery speed at a large bias of 20 V, but can also show a weak photoresponse to above- and below-bandgap energy light. Moreover, their spectral response range can show tunable selectivity to above- and below-bandgap light, which can be accurately controlled by temperature and bias. More importantly, the modulated spectral response characteristics show excellent memory behaviour after reversible writing and erasing by using temperature and bias. In nanostructures, abundant surface states and stacking fault-related traps play a vital role in the ultrahigh photoresponse to bandgap light and the erasable memory effect on spectral response range selectivity. Given the erasable memory of the spectral response selectivity with excellent photoconduction performance, the CdS NBs possess important applications in new-generation photodetection and photomemory devices.

Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

Here, we demonstrate that a single CdS nanobelt with numerous stacking faults, synthesized by a thermal evaporation method, can show a giant stress-response to compressive and tensile strains with an ultrahigh gauge factor of ∼104 and ultrafast millisecond response and recovery speed. After the strains were removed, more importantly, the stress can trigger a high resistance state (HRS), indicative of a nonvolatile stress sensing and memory effect. Moreover, the stress-induced HRS can return to the initial low resistance state (LRS) after a relatively large bias was subsequently applied, indicative of a bias-erasing effect. In nanostructures, numerous stacking faults, serving as trap centres, can capture and store charges. Therefore, the bulk structural defects play a crucial role in superior stress sensing accompanied by an erasable nonvolatile memory effect. Compressive strain can trigger the height of the trap barrier to decrease, whereas tensile strain can trigger it to increase. Therefore, the conductance of the CdS nanobelt regularly increases with an increase in compressive strain. In contrast, it decreases with an increase in tensile strain, showing the strain dependence of conductance. After compressive or tensile strains were removed, in addition, the total number of electrons localized in traps is also reduced, and correspondingly the conductance decreases, showing a nonvolatile stress-writing HRS memory effect. Subsequently, the charges can be injected into traps at a relatively large bias, resulting in the recovery of the LRS, namely an erasable effect. Regarding superior stress-switching accompanied by stress-writing and bias-erasing memory, a multi-defect CdS nanostructure has tremendous potential in nonvolatile stress sensing and memory applications.

Ultrahigh stress response and storage properties in a single CdS nanobelt-based flexible device for an erasable nonvolatile stress sensing and memory effect

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Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes.

Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

Ultrahigh stress response and storage properties in a single CdS nanobelt-based flexible device for an erasable nonvolatile stress sensing and memory effect