Temperature dependence of the FMR absorption lines in viscoelastic magnetic materials

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/magnetic floating gate (Fe)/tunnel layer (CeO2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hysteresis behavior was changed by the application of an external magnetic field. These results indicate that this MIS capacitor contains a ferromagnetic floating gate and a magneto-electric insulating layer in a single system.

Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr2O3

Ni nanostructures of different geometries as spheres, ellipsoids or wires, as well as with various spatial distributions are deposited electrochemically within the pores of porous silicon (PS). The hybrid material offers magnetic properties which depend on the morphology of the composite and the interactions between the metal precipitates, respectively. So the magnetic behavior can be correlated with the process parameters. On the one hand the morphology of the PS template determines the coupling of the metal structures located within adjacent pores and on the other hand the spatial distribution and geometry of the deposits influences the interaction of nanostructures within one pore. Thus also the anisotropy of the nanocomposite can be modified not only by the shape of the ferromagnetic nanostructures but also by their spatial density within the oriented pores of the porous matrix.

Interacting low dimensional nanostructures within a porous silicon template

We investigated the relationship between the magneto-capacitance-voltage characteristics and the magnetoresistance of a metal (Au)/insulator (Cr2O3∕Cr2O3−x∕FeCr∕CeO2)/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the FeCr∕CeO2 layer from Si were injected into the Cr2O3−x layer. When a magnetic field was applied, the resistance of this capacitor above the flat-band voltage was reduced, causing the hysteresis window to become large. This result indicates that this capacitor, which contains a magnetic gate insulator, has the potential to be used in multilevel memories by the application of an external magnetic field.

Relationship between magneto-capacitance-voltage characteristics and magnetoresistance of Au∕Cr2O3∕Cr2O3−x∕FeCr∕CeO2∕Si metal-insulator-semiconductor capacitor

We investigated the magnetic interaction between antiferromagnetic, magnetoelectric Cr2O3 film and ferromagnetic La0.7Sr0.3MnO3 film, which shows colossal magneto-resistance. Magnetic properties and structural analyses revealed that a decrease in the thickness of La0.7Sr0.3MnO3 films gives rise to a change in magnetic anisotropy from perpendicular to in-plane. The exchange interaction between Cr2O3 and La0.7Sr0.3MnO3 also changed depending on the magnetic properties of La0.7Sr0.3MnO3. This suggests that the crystallographical control and the selection of a suitable thickness of La0.7Sr0.3MnO3 are important to obtain an exchange interaction in the magnetic hetero system using colossal magneto-resistance material.

Preparation and Exchange Bias of a Cr2O3/(La0.7Sr0.3)MnO3 Magnetic Hetero Junction

We investigated the magneto-electric properties and electric properties of Cr2O3 thin films. Cr2O3 thin films were prepared on a thermal-oxidized Si substrate and a c-Al2O3 substrate. The sample prepared on the thermal-oxidized Si substrate had poly-crystalline structure. On the other hand, the sample prepared on the c-Al2O3 substrate has preferentially (006) oriented structure. Both samples had high enough resistivity to get a high induced magnetic moment. The induced magnetic moment by applying external voltage was observed on the oriented sample, although there was no induced magnetic moment on the same voltage for the poly-crystalline sample. This difference may be due to the random distribution of crystal and the leakage current caused by the Pool-Frenkel type defect in the poly-crystalline film.

Preparation and Investigation on Magneto-Electric Effect of Cr2O3 Thin Films

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.

Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials

We have investigated the dielectric properties of the Cr 2 O 3 films using ferromagnetic electrode; (La 0.66 , Sr 0.33 )MnO 3 . The relationships between those properties and their crystallinity also have been investigated. The well crystallized sample was exhibited low leakage current density. Although all samples show capacitance decreasing by applying voltages, the decreasing ratio was the largest on the sample with lowest leakage current density. Since the Cr 2 O 3 film with same leakage current density as that sample using non-magnetic electrode didn't show any capacitance changes by applying voltages, it is suggested that the dielectric properties of Cr 2 O 3 film might be affected by the ferromagnetic film.

Capacitance Tunability of Magneto-electric Material:Cr2O3 using Ferromagnetic (La,Sr)MnO3 Electrode

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Preparation and Investigation on Magneto-Electric Effect of Cr2O3 Thin Films

Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials

Capacitance Tunability of Magneto-electric Material:Cr2O3 using Ferromagnetic (La,Sr)MnO3 Electrode