Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p + -type emitter layer having a thickness of 20 to 100 nm and reaching the substrate.

Method of manufacturing semiconductor device and semiconductor device

A semiconductor device and method of manufacturing the same includes an n--single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n--drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.

Semiconductor device and manufacturing method thereof

PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of reducing on-voltage and loss.SOLUTION: The power semiconductor device includes an L-like trench gate 21 containing a bottom part 3d which is formed from the surface of a p base layer 2 upto the position reaching the interior of an nlayer 1 along vertical direction relative to a first main surface of the nlayer 1, and then, extended on one side by a predetermined length along horizontal direction relative to the first main surface of the nlayer 1. The extension directions of bottom parts 21d of predetermined adjoining L-like trench gates 21 are opposed to each other, and the interval of the bottom parts 21d is narrower than the interval between the portions formed vertically to the first main surface of the nlayer 1.

Power semiconductor device

Provided is a semiconductor device (10) having a transistor structure including a laminated gate electrode, in which at least two layers of polycrystalline silicon films are laminated A polycrystalline silicon film (2, 32) at the lowest layer of an nMOS gate electrode (9, 20N) to be formed in an nMOS region has a particle diameter larger than that of a gate electrode film (8, 32b) of an upper layer The cubic expansion accompanying the diameter increase in the nMOS gate electrode bottom applies a stress in the vertical direction to a channel region (CH) just below the gate electrode

Semiconductor device and its manufacturing method

An insulated gate bipolar transistor having multiple gates and a method for manufacturing the same are provided to improve a latch up characteristic by removing a hole current path through a trench process and forming then a gate. A first polycrystal silicon gate(210) is formed in a center portion of a cell, and a second polycrystal silicon gate is formed on a sidewall of the edge of the cell. A first electrode(220) of conductor is formed between the first polycrystal silicon gate and the second polycrystal silicon gate. A second electrode(230) made of conductor is formed adjacent to the second polycrystal silicon gate. The first polycrystal silicon gate penetrates an N-type region and a P-type region.

Insulated gate bipolar transistor with multiple trench and method for menufacturing insulated gate bipolar transistor with multiple trench

PROBLEM TO BE SOLVED: To increase a latch-up resistance and to reduce a leakage current at a reverse voltage applying time by improving a trade-off relation between an on voltage and turn-off loss of a MOS semiconductor device such as an IGBT or the like. SOLUTION: A method for manufacturing the semiconductor device comprises the steps of forming a gate electrode 3 on a semiconductor substrate 1 via an insulating film 2, and forming a p-type base region 6 and an n+ type emitter region 7 on a thin film semiconductor layer 11 formed on the electrode 3 via an insulating film 5 through a coupled semiconductor 12 from the surface of the substrate 1. An emitter layer is thinned for microminiaturization of an emitter structure, and a latch-up resistance is increased by remotely separating a hole current in the p-type region 6 from the region 7. Simultaneously, an impurity concentration of the region 6 is lowered, a leakage current at a reverse voltage applying time is reduced, and hence an operation as a bidirectional device can be performed.

Mis semiconductor device and its manufacturing method

PROBLEM TO BE SOLVED: To improve the trade off relation between on-voltage and turn-off loss of an MIS semiconductor device such as IGBT, etc. SOLUTION: An n+ contact area 7 and a p+ contact area 8 are formed on a first epitaxial layer which is piled up on a low-resistance n+ semiconductor substrate 1. An n+ emitter area 14, a p base area 16, and an n- channel area 15 are formed in a second epitaxial layer. A polysilicon gate electrode 18 is formed on the emitter area 14 and base area 16 with a gate insulation film interposed, and it is covered with insulation films 19 and 20. An n- drift layer 21 is formed on the surface of the channel area 15 by epitaxial growth in the horizontal direction (ELO). Then an n- buffer layer 22 and a p+ collector layer 23 are formed on the surface of the n- drift layer 21. Such a formation process improves the strength of a thin-film collector IGBT, thus permitting easy processing. In addition, it can avoid the lamination step of a bidirectional IGBT and ease processing while keeping its mechanical strength.

Mis semiconductor device

PROBLEM TO BE SOLVED: To provide an MOS gate thyristor in which an on-voltage is low while a turn-off characteristics is as fast as IGBT. SOLUTION: An emitter is a thin film. An emitter electrode is divided into a first emitter electrode (Ea) 8 contacting a first conductive type emitter region 2 and a second emitter electrode (Eb) 6 contacting a second conductive type base region 2 with the second emitter electrode 6 taken out of a second trench 16. The second emitter electrode 6 is a floating potential at turn-on while the first emitter electrode 8 is shorted with the second emitter electrode 6 or they are connected using a small resistor at turn-off.

Mos gate thyristor and control method therefor

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Takei Manabu

Author Tools

Chat about Author

Papers

Mis semiconductor device and its manufacturing method

Mis semiconductor device

Mos gate thyristor and control method therefor