Takashi Kondo
Fuji Xerox
80 Papers
631 Citations
Takashi Kondo is an academic researcher from Fuji Xerox. The author has contributed to research in topics: Vertical-cavity surface-emitting laser & Laser. The author has an hindex of 16, co-authored 80 publications. Previous affiliations of Takashi Kondo include Tokyo Institute of Technology.
Chat about Author
Papers
Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
Masao Kawaguchi,Tomoyuki Miyamoto,Eric Gouardes,D. Schlenker,Takashi Kondo,Fumio Koyama,Kenichi Iga +6 more
TL;DR: In this paper, a low-threshold long-wavelength GaInNAs double quantum well (DQW) laser was grown by metalorganic chemical vapor deposition (MOCVD) and achieved a threshold current density of 450 A/cm2 for a 1.28 µm emitting laser.
106
Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
Masao Kawaguchi,Eric Gouardes,D. Schlenker,Takashi Kondo,Tomoyuki Miyamoto,Fumio Koyama,Kenichi Iga +6 more
TL;DR: In this article, a metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at 1.25 /spl mu/m is reported and the threshold current density per well was 170 A/cm/sup 2/, which is the lowest threshold value reported to date.
44
•Proceedings Article
Transverse mode control by etching depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers
Jong-Hwa Baek,In-Kag Hwang,Kum-Hee Lee,Yong-Hee Lee,Young-Gu Ju,Takashi Kondo,Tomoyuki Miyamoto,Fumio Koyama +7 more
- 16 May 2004
TL;DR: In this article, a non-degenerate single-transverse mode was obtained in 12 /spl sim/18-pair-etched PC-VCSELs over the entire operating current range.
30
Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells
D. Schlenker,Tomoyuki Miyamoto,Z. Chen,Masao Kawaguchi,Takashi Kondo,Eric Gouardes,Fumio Koyama,Kenichi Iga +7 more
TL;DR: In this article, the authors experimentally determined the critical layer thickness for highly strained 1.2-μm GaInAs/GaAs quantum wells of good crystal quality and showed that the dependence of the critical thickness on the indium content indicates that the observed quality degradation is caused by a growth mode transition.
27