Taeyong Eom
Seoul National University
44 Papers
162 Citations
Taeyong Eom is an academic researcher from Seoul National University. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 13, co-authored 33 publications.
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Papers
(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array
Yong Cheol Shin,Jaewon Song,Kyung-Min Kim,Byung Joon Choi,Seol Choi,Hyun Ju Lee,Gun Hwan Kim,Taeyong Eom,Cheol Seong Hwang +8 more
TL;DR: A Schottky-type diode switch consisting of a Pt∕(In,Sn)2O3∕TiO2∕Pt stack was fabricated for applications to cross-bar type resistive-switching memory arrays as discussed by the authors.
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Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
Byung Joon Choi,Seol Choi,Taeyong Eom,Seung Wook Ryu,Deok-Yong Cho,Jaeyeong Heo,Hyeong Joon Kim,Cheol Seong Hwang,Yoon-Jung Kim,Suk Kyoung Hong +9 more
TL;DR: In this article, the effect of the substrate on the nucleation and growth behavior of Ge2Sb2Te5 (GST) thin films deposited by a combination of plasmaenhanced chemical vapor deposition (for Sb and Te) and plasma-enhanced atomic layer deposition(for Ge) processes at wafer temperatures ranging from 100 to 200 °C.
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Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
Taeyong Eom,Seol Choi,Byung Joon Choi,Min Hwan Lee,Taehong Gwon,Sang Ho Rha,Woongkyu Lee,Moo-Sung Kim,Manchao Xiao,Iain Buchanan,Deok-Yong Cho,Cheol Seong Hwang +11 more
TL;DR: In this paper, the phase change random access memory (P-RAM) was used for high-density nonvolatile memory (NVM) with a substrate temperature as low as 70 °C.
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Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
Sang Woon Lee,Byung Joon Choi,Taeyong Eom,Jeong Hwan Han,Seong Keun Kim,Seul Ji Song,Woongkyu Lee,Cheol Seong Hwang +7 more
TL;DR: In this paper, a review of the non-ideal aspects of ALD reactions is presented, which may influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control.
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Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin films with a Te layer
TL;DR: The BRS behavior can be attributed to the formation and rupture of the semiconducting conductive Te bridge through the migration of the Te ions in the amorphous GST matrix under a high electric field.
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