A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation

An example particle therapy system includes: a synchrocyclotron to output a particle beam; a magnet to affect a direction of the particle beam to scan the particle beam across at least part of an irradiation target; scattering material that is configurable to change a spot size of the particle beam, where the scattering material is down-beam of the magnet relative to the synchrocyclotron; and a degrader to change an energy of the beam prior to output of the particle beam to the irradiation target, where the degrader is down-beam of the scattering material relative to the synchrocyclotron.

Particle beam scanning

This device has a liner disposed on a face in a vacuum chamber. A component in the vacuum chamber defines the face. The liner is configured to protect the workpiece from contamination or to prevent blistering of the face caused by implantation of atoms or ions into the face. The liner may be disposable and removed from the face in the vacuum chamber and replaced with a new liner in some embodiments. This liner may be a polymer with a roughened surface, be carbon-based, or be composed of carbon nanotubes in some embodiments.

In-vacuum protective liners

An example particle therapy system includes: a particle accelerator to output a beam of charged particles; and a scanning system to scan the beam across at least part of an irradiation target An example scanning system includes: a scanning magnet to move the beam during scanning; and a control system (i) to control the scanning magnet to produce uninterrupted movement of the beam over at least part of a depth-wise layer of the irradiation target so as to deliver doses of charged particles to the irradiation target; and (ii) to determine, in synchronism with delivery of a dose, information identifying the dose actually delivered at different positions along the depth-wise layer

Scanning system for a particle therapy system

An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Ion implanter with etch prevention member(s)

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Ion implanter with etch prevention member(s)