We report on experimental investigations on room temperature emission of the terahertz radiation from a doubly interdigitated grating gate high-electron mobility transistor. The device was subjected to 1.5-mm cw beam laser and the detection was performed using a 4.2 K silicon bolometer. The detected signal is interpreted as a self oscillation of the plasma waves. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Bolometric detection of terahertz radiation from new grating gates device

....................................................................................................................................ix Summary....................................................................................................................................x List of Tables...........................................................................................................................xii List of Figures.........................................................................................................................xiv Author’s Publications...........................................................................................................xxiii Chapter

/pdf/monolithic-integration-of-gaas-to-si-by-direct-wafer-bonding-38admcw597.pdf

Monolithic integration of GAAS-to-SI by direct wafer bonding

We investigated the emission of terahertz radiation from a doubly interdigitated grating gates high electron mobility transistor. The experiment was performed using Fourier spectrometer system coupled with high sensitive 4 K Silicon bolometer under the vacuum. The observed emission was explained as due to the excitation of the plasma waves by means of hot 2D plasmons. We also investigated the optical stimulation of the plasma waves by subjecting the device to a CW 1.5 µm laser beam. Dependence of the emission on the gate bias (i.e. on electron density) was observed and interpreted as due to the self oscillation of the plasma waves.

Efficiency enhancement of emission of terahertz radiation by optical excitation from dual grating gate HEMT

/pdf/electrical-activity-of-misfit-dislocations-in-gaas-based-13cx9l53y4.pdf

Electrical activity of misfit dislocations in GaAs-based heterostructures

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Electrical activity of misfit dislocations in GaAs-based heterostructures