T. Worm
Aarhus University
24 Papers
69 Citations
T. Worm is an academic researcher from Aarhus University. The author has contributed to research in topics: Electron & Bent molecular geometry. The author has an hindex of 12, co-authored 23 publications.
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Papers
Radiation emission and its influence on the motion of multi-gev electrons and positrons in strong crystalline fields
A. Baurichter,K. Kirsebom,Yu.V. Kononets,R. Medenwaldt,U. Mikkelsen,Søren Pape Møller,E. Uggerhøj,T. Worm,K. Elsener,S. Ballestrero,P. Sona,J. Romano,Simon Henry Connell,J.P.F. Sellschop,R.O. Avakian,A.E. Avetisian,S. Taroian +16 more
TL;DR: In this paper, the first experimental demonstration of a dramatic radiative redistribution in transverse states for multi-GeV electrons/positrons, interacting with strong crystalline fields is presented.
Deflection of 200 GeV/c and 450 GeV/c positively charged particles in a bent germanium crystal
Cristina Biino,M. Clement,Niels Doble,K. Elsener,A. Freund,L. Gatignon,P. Grafström,K. Kirsebom,U. Mikkelsen,Søren Pape Møller,E. Uggerhøj,T. Worm +11 more
TL;DR: In this article, a bent germanium crystal was used for high-energy beam deflection by means of a bent Germanium (GEM) crystal, and the results obtained with 200 and 450 GeV/c positively charged particles were well described by a classical model, giving confidence in predictions for other crystals and different beam momenta.
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Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals
A. Baurichter,K. Kirsebom,R. Medenwaldt,U. Mikkelsen,S.P. Møller,E. Uggerhøj,T. Worm,Yu.V. Kononets,K. Elsener,S. Ballestrero,P. Sona,Cristina Biino,Simon Henry Connell,J.P.F. Sellschop,Zabulon Vilakazi,A.B. Apyan,R.O. Avakian,K.A. Ispirian,S. Taroian +18 more
TL;DR: In this paper, the distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the 〈1 1 0〉 axis or along a random direction has been investigated.
10
Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
B.N. Jensen,Søren Pape Møller,E. Uggerhøj,T. Worm,H. Atherton,M. Clement,Niels Doble,K. Elsener,L. Gatignon,P. Grafström,J.B. Jeanneret,M. Hage-Ali,P. Siffert +12 more
TL;DR: In this article, a 450 GeV proton beam has been bent by various angles from 4 to 14 mrad using planar channeling in a (111) silicon crystal, and detailed investigations of the deflected beam as well as the unbent and scattered particles have been performed.